Electrical and optical properties of in and Al doped ZnO thin film

Park, Sang-Uk; Koh, Jung‐Hyuk

doi:10.1007/s13391-013-0046-9

Cited by 15 publications

(8 citation statements)

References 9 publications

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“…Higher doping of yttrium causes greater recombination of electron hole pairs because of the dopant ions acting as recombination centers in the bulk and at the surface. 59 As expected, the pristine sample shows a dramatic rise in R R toward higher potentials past the onset, and 0.15% retains the fastest recombination. Somewhat unexpected is the reversal of recombination rates of 0.10 and 0.04% samples at 0.7 V RHE .…”

supporting

confidence: 71%

Yttrium-Doped ZnO Nanorod Arrays for Increased Charge Mobility and Carrier Density for Enhanced Solar Water Splitting

et al. 2019

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supporting

confidence: 71%

Yttrium-Doped ZnO Nanorod Arrays for Increased Charge Mobility and Carrier Density for Enhanced Solar Water Splitting

et al. 2019

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“…A range of doped zinc oxides are a viable alternative to ITO. [4] The large bandgap, ease of doping and high conductivity of zinc oxide is consistent with the prerequisites for TCOs however doping is necessary due to the low carrier concentration and thus high resistivity of pure ZnO. [5] The doping of zinc oxide occurs through n-type doping where impurities are introduced into the crystal lattice to cause an excess of negative charge carriers.…”

Section: Introductionmentioning

confidence: 83%

Metal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxide

et al. 2018

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Aerosol assisted chemical vapour deposition (AACVD) has been used to deposit thin films of ZnO from the single-source precursor [Zn((OC(Me)CHC(Me)N(i Pr))2] (1) affording highly transparent (>80%) and conductive films (sheet resistance ~70 KΩ/sq). Extension of this AACVD method whereby related precursors of the type, [R2M(OC(Me)CHC(Me)N(i Pr)] (R = Et, M = Al (2); R = Me, M = Ga (3)), isolated as oils, were added to the precursor solution allowed for the deposition of aluminium-and gallium-doped ZnO (AZO and GZO) films, respectively. Complexes 1-3 were characterised by elemental analysis, NMR and mass spectrometry. Films were deposited in under 30 minutes at 400 °C, from CH2Cl2/toluene solutions with a N2 carrier gas. Herein we report the bulk resistivity, , of AZO (0.252 Ωcm) and GZO (0.756 Ωcm) films deposited from this novel approach. All the films transparency exceeded 80% in the visible, X-ray diffraction (XRD) showed all films to crystallise in the wurzite phase whilst X-ray photoemission spectroscopy (XPS) confirmed the presence of the Al and Ga dopants in the films, and highlighted the low C-contamination (< 5%) this route offers. Investigation of a mechanism analogous to the Kirkendall effect confirmed that heating of GZO films at 1000 °C produced the spinel structure GaZn2O4.

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“…are generally introduced effective dopants. [51][52][53][54][55][56][57][58] Electrical properties of TCO films are largely affected by both the dopant and nanostructures. In this regard, it is important to understand the electronic structures of doped ZnO to obtain proper physical characteristics.…”

Section: Understanding Electrical Properties Of Sputter-deposited Znomentioning

confidence: 99%

Recent advances in the transparent conducting ZnO for thin-film Si solar cells

Moon

Shin

Park

2015

Electron. Mater. Lett.

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The key challenge for solar-cell development lies in the improvement of power-conversion efficiency and the reduction of fabrication cost. For thin-film Si solar cells, researches have been especially focused on the light trapping for the breakthrough in the saturated efficiencies. The ZnObased transparent conducting oxides (TCOs) have therefore received strong attention because of their excellent light-scattering capability by the texture-etched surface and cost effectiveness through in-house fabrication. Here, we have highlighted our recent studies on the transparent conducting ZnO for thin-film Si solar cells. From the electrical properties and their degradation mechanisms, bilayer deposition and organic-acid texturing approaches for enhancing the light trapping, and finally the relation between textured ZnO and electrical cell performances are sequentially introduced in this review article.

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Electrical and optical properties of in and Al doped ZnO thin film

Cited by 15 publications

References 9 publications

Yttrium-Doped ZnO Nanorod Arrays for Increased Charge Mobility and Carrier Density for Enhanced Solar Water Splitting

Yttrium-Doped ZnO Nanorod Arrays for Increased Charge Mobility and Carrier Density for Enhanced Solar Water Splitting

Metal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxide

Recent advances in the transparent conducting ZnO for thin-film Si solar cells

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