Electrical and optical measurements of CVD diamond doped with sulfur

Garrido, José Antonio; Nebel, Christoph E.; Stutzmann, M.; Gheeraert, Etienne; Casanova, N.; Bustarret, Étienne

doi:10.1103/physrevb.65.165409

Cited by 20 publications

(6 citation statements)

References 13 publications

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“…Indeed, it now seems that the incorporation of S favours unintentional co-incorporation of B, even if present in the growth environment only in minute quantities. Detailed electrical and optical measurements of CVD-grown homo-epitaxial diamond in the presence of H 2 S [14] confirm the presence of a B acceptor level in the samples and perhaps a deep donor level attributed to N. The existence of some unidentified optical levels was also reported. In contrast, CL and Hall effect measurements on S-containing diamond layers by Nakazawa et al [15] seem to show the presence of a donor level with an activation energy of 0.5-0.75 eV.…”

Section: Sulfurmentioning

confidence: 60%

Diamond as a unique high-tech electronic material: difficulties and prospects

Kalish¹

2007

J. Phys. D: Appl. Phys.

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Diamond is a wide band gap semiconductor with unique electrical, physical, chemical and mechanical properties, opening the possibility to realize, in diamond, electronic devices with unprecedented properties. However, this uniqueness also poses some difficulties specific to diamond. Amongst these are the wide band gap of diamond, the presence of electrically active defects due to sp2 bonded carbon and unintentionally present impurities, the absence of shallow dopants in diamond (in particular donors), the presence of extended defects and grain boundaries (in CVD polycrystalline diamond) and difficulties related to material availability and device processing.Nevertheless, diamond-based prototype devices with promising properties have been realized in the last few years. These include, amongst others, Schottky diodes, field effect transistors, cold electron emission devices and detectors for ionizing radiation, demonstrating the huge potential that this wide band gap semiconductor bears.The uniqueness of diamond, the promise it bears as an unusual material for specific electronic devices and the difficulties related to its application are briefly reviewed. Reference is given to some recent reviews published on specific topics and to some of the more recent breakthroughs and potential applications in the field.

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Section: Sulfurmentioning

confidence: 60%

Diamond as a unique high-tech electronic material: difficulties and prospects

Kalish¹

2007

J. Phys. D: Appl. Phys.

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“…The identification and control of defects such as vacancies, interstitials, and impurities is a major field of research, with important applications in materials engineering. Defects have been studied using a wide range of experimental techniques, including electron paramagnetic resonance ͑EPR͒ spectroscopy, 1,2 electronnuclear double resonance ͑ENDOR͒ spectroscopy, 3 Hall conductivity, 4,5 positron annihilation, 6,7 and deep-level transient spectroscopy ͑DLTS͒. 8,9 These experiments have revealed various types of defects.…”

Section: Introductionmentioning

confidence: 99%

“…5 The relative stabilities and concentrations of defects are determined by their formation energies, which primarily depend on the structures and electronic charge states of the defects. [10][11][12][13] In addition, the kinetic properties of defects, such as diffusion mechanisms and migration energies, strongly depend on the charge state.…”

Section: Introductionmentioning

confidence: 99%

Density-functional calculations of defect formation energies using supercell methods: Defects in diamond

et al. 2005

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Density-functional theory combined with periodic boundary conditions is used to systematically study the dependence of defect formation energy on supercell size for diamond containing vacancy and self-interstitial defects. We investigate the effect of the electrostatic energy due to the neutralization of charged supercells and the effect of the alignment of the valence band maximum ͑VBM͒ on the formation energy. For negatively charged vacancies and positively charged interstitials, the formation energies show a clear dependence on supercell size, and the electrostatic corrections agree with the trend given by the Makov-Payne scheme ͑Ref. 28͒. For positively charged vacancies and negatively charged interstitials, the size dependence and the electrostatic corrections are quite weak. An analysis of the spatial charge density distributions reveals that these large variations in electrostatic terms with defect type originate from differences in the screening of the defect-localized charge, as explained by using a simple electron-gas model. Several VBM alignment schemes are also tested. The best agreement between the calculated and asymptotically exact ionization levels is obtained when the levels are based on the formation energies referenced to the VBM of the defect-containing supercell.

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“…The status of the S-doped diamond technology is at a similar stage to that of O, as both underlying mechanisms are still being discussed. S-doped CVD grown diamond was successfully synthesized, with H 2 S being the source for S [ 201 , 202 ]. However, there were unintentional B atoms in the diamond, creating acceptor levels with an activation energy of 0.37 eV, whereas S was responsible for the 1.55 donor activation energy level, which is as deep as N [ 201 ].…”

Section: Materials Quality and Growth Techniquesmentioning

confidence: 99%

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

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Electrical and optical measurements of CVD diamond doped with sulfur

Cited by 20 publications

References 13 publications

Diamond as a unique high-tech electronic material: difficulties and prospects

Diamond as a unique high-tech electronic material: difficulties and prospects

Density-functional calculations of defect formation energies using supercell methods: Defects in diamond

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

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