Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Murad, Shahjahan N.; Baine, Paul; Montgomery, Jenny; McNeill, David; Mitchell, S.J.N.; Armstrong, B.M.; Modreanu, M.

doi:10.1149/1.3700879

Cited by 2 publications

(2 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With the ever shrinking dimensions of electronic devices, germanium has been attracting increased interest as a future material for transistor channels and optical interconnects. − However, the interfaces introduced by Ge often require passivation because the germanium native oxide has poor material and interface properties. , One such passivation, the formation of interfacial germanium oxynitride (with band gap close to 5 eV), is a promising candidate for germanium-based devices because of this interface’s superior defect density and stability compared to those of the oxide. − In recent years, there has also been significant effort to passivate semiconductor surfaces with organic molecules, with potential applications in combining molecular electronics with conventional semiconductor technologies. − The 2 × 1 reconstructed (100) face of silicon and germanium is the focus of much research on their surface chemistry with organic molecules because of its industrial importance. This surface contains arrays of “dimers” that act as the local reaction sites. , …”

Section: Introductionmentioning

confidence: 99%

Thermally Activated Reactions of Nitrobenzene at the Ge(100)-2 × 1 Surface

Shong

Bent

2014

J. Phys. Chem. C

View full text Add to dashboard Cite

The adsorption of nitro compounds on the germanium surface serves as a model system for understanding the formation of interfacial germanium oxynitride. We have studied the adsorption and thermal reactions of nitrobenzene on the Ge(100)-2 × 1 surface under ultrahigh vacuum conditions. A combination of infrared spectroscopy, X-ray photoelectron spectroscopy, and temperature-programmed desorption experiments together with density functional theory calculations was used to elucidate possible product structures and their associated reaction mechanisms. Our study suggests that nitrobenzene initially forms a 1,3-dipolar cycloaddition product with a Ge(100) surface dimer as the major species. Minor side products are also formed at 300 K. Upon heating, some of the adsorbates molecularly desorb, while a fraction of the adsorbates undergo oxygen atom insertion into the surface, transforming them into triplet nitrene products. The energetics and pathways of nitrobenzene on the Ge surface are discussed in comparison with those seen on the closely related Si(100)-2 × 1 surface, with some differences arising from the smaller adsorption energy of organic adsorbates on Ge.

show abstract

Section: Introductionmentioning

confidence: 99%

Thermally Activated Reactions of Nitrobenzene at the Ge(100)-2 × 1 Surface

Shong

Bent

2014

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…Most studies have been developed focusing on C-V measurement characteristics to understand the influence of the gate stack composition (1,3,4), aiming for a low interface state density. Moreover, the high-k material is constantly studied to achieve the lowest possible EOT.…”

Section: Introductionmentioning

confidence: 99%

Impact of Gate Stack Dielectric on Intrinsic Voltage Gain and Low Frequency Noise in Ge pMOSFETs

et al. 2015

View full text Add to dashboard Cite

This paper presents an experimental analysis of the gate stack dielectric influence on low frequency noise and intrinsic voltage gain (A V ) in planar germanium pMOSFETs with a HfO 2 /Al 2 O 3 gate stack. The Av is studied not only at room temperature, but also from 25 to 150 °C. It is observed that neither the HfO 2 -thickness nor the plasma oxidation power have a significant impact on the noise power spectral density and intrinsic voltage gain (A V ). In contrast, the thinner Al 2 O 3 -layer is more susceptible to any damage during the fabrication processes, which increases the interface state density (N IT ) between the Ge surface and gate stack layer, resulting in a device performance degradation. Furthermore, from high temperature point of view, the A V is predominantly dominated by the carrier mobility degradation, which reduces the transconductance.

show abstract

Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Cited by 2 publications

References 11 publications

Thermally Activated Reactions of Nitrobenzene at the Ge(100)-2 × 1 Surface

Thermally Activated Reactions of Nitrobenzene at the Ge(100)-2 × 1 Surface

Impact of Gate Stack Dielectric on Intrinsic Voltage Gain and Low Frequency Noise in Ge pMOSFETs

Contact Info

Product

Resources

About