Electrical and Optical Characterization of SiC

Pensl, Gerhard; Schmid, Frank; Ciobanu, Florin; Laube, Michael; Reshanov, Sergey A.; Schulze, Norbert; Semmelroth, Kurt; Schöner, Adolf; Wagner, G.; Nagasawa, Hiroyuki

doi:10.4028/www.scientific.net/msf.433-436.365

Cited by 30 publications

(27 citation statements)

References 11 publications

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“…The estimated acceptor density exceeds the chemical density of the acceptor impurities. In order to avoid this contradiction, the SiC community usually use an experimental Hall factor, r Hexp , proposed by Pensl et al for acceptor density ranging between 2 × 10 15 and 2 × 10 18 cm −3 . This coefficient decreases when temperature increases and it is similar in variation to the Hall factor reported for low‐doped p‐type Si (Fig.…”

Section: Theoretical Backgroundsmentioning

confidence: 99%

Electrical transport properties of p-type 4H-SiC

Contreras

Konczewicz

Arvinte

et al. 2016

Phys. Status Solidi A

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The Hall hole density p H and Hall mobility m H in highly aluminum-doped 4H-SiC have been investigated in the wide temperature range between 100 and 900 K. After an overview of the literature data related to the analysis of electrical transport experiments, a model taking into account the two uppermost valence bands of heavy and lights holes, one single acceptor energy E A and the empirical Hall factor r Hexp has been discussed in details. The limits of the applied model as a function of temperature and acceptor concentration have been considered. For each analyzed sample, the acceptor density N A and the compensation ratio N D /N A have been experimentally assessed by capacitance-voltage and secondary ion mass spectroscopy measurements. Finally, the Hall carrier concentration vs. doping level N A -N D as well as ionization energy of acceptor E A vs. acceptor concentration N A in 4H-SiC have been discussed.

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Section: Theoretical Backgroundsmentioning

confidence: 99%

Electrical transport properties of p-type 4H-SiC

Contreras

Konczewicz

Arvinte

et al. 2016

Phys. Status Solidi A

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“…The ratio of p(T ) simulated with N Mg of 1.0 × 10 19 cm −3 to the experimentally obtained p(T ) was calculated. In the literature [14,15], this ratio corresponds to the empirical γ H (T ). denoted by a solid line.…”

Section: Resultsmentioning

confidence: 99%

Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

Matsuura

Morine

Nagamachi³

2014

Acta Phys. Pol. A

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Because Al and B (elements of group III) in SiC are acceptors with deep energy levels and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (an element of group II) that may emit two holes into the valence band is investigated. Annealing at 1800• C makes a Mg-implanted layer p-type. It is found that an Mg acceptor level in 4H-SiC is too deep to reliably determine the density and energy level of the Mg acceptor using the frequently used occupation probability, i.e., the FermiDirac distribution function. Using the distribution function that accounts for the inuence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be determined to be approximately 1 × 10 19 cm −3 and 0.6 eV, respectively. These values are considered to be reliable because they agree well with the Mg implantation condition.

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“…The situation in wide band gap semiconductors such as Mg-doped p-type GaN has also been the same. 10,11 In order to determine a reliable value for N A using p(T) in p-type SiC, the following two attempts have been made: ͑1͒ the experimental adjustment of Hall-scattering factor for holes 12,13 and ͑2͒ the theoretical introduction of a distribution function suitable for Al acceptors. 8,9,14,15 Moreover, Al atoms with high density may disturb the valence band structure near E V , and might form an impurity band.…”

Section: Introductionmentioning

confidence: 99%

Investigation of a distribution function suitable for acceptors in SiC

Matsuura

2004

Journal of Applied Physics

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The distribution function suitable for an acceptor in p-type SiC is investigated using lightly or heavily Al-doped SiC samples. From the temperature dependence of the hole concentration, the density and energy level of the acceptors are estimated using two different distribution functions. The proposed distribution function, which considers the influence of the excited states of acceptors, can be applied to both the samples, while the Fermi–Dirac distribution function, which does not include this influence, can be applied only to the lightly doped sample. In order to elucidate this result theoretically, the dependencies of both distribution functions on the temperature or the acceptor density are simulated. From these simulations, the proposed distribution function is found to be appropriate for determining the density and energy level of dopants with a deep dopant energy level for any dopant density.

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Electrical and Optical Characterization of SiC

Cited by 30 publications

References 11 publications

Electrical transport properties of p-type 4H-SiC

Electrical transport properties of p-type 4H-SiC

Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

Investigation of a distribution function suitable for acceptors in SiC

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