Electrical transport properties of p-type 4H-SiC

Abstract

The Hall hole density p H and Hall mobility m H in highly aluminum-doped 4H-SiC have been investigated in the wide temperature range between 100 and 900 K. After an overview of the literature data related to the analysis of electrical transport experiments, a model taking into account the two uppermost valence bands of heavy and lights holes, one single acceptor energy E A and the empirical Hall factor r Hexp has been discussed in details. The limits of the applied model as a function of temperature and acceptor concentration have been considered. For each analyzed sample, the acceptor density N A and the compensation ratio N D /N A have been experimentally assessed by capacitance-voltage and secondary ion mass spectroscopy measurements. Finally, the Hall carrier concentration vs. doping level N A -N D as well as ionization energy of acceptor E A vs. acceptor concentration N A in 4H-SiC have been discussed.

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

“…This statement corresponds to a more general observation: assuming Hall coefficient rH=1 leads to a systematic overestimation of the doping level in the matching procedure. Similar results are obtained in other wide band gap semiconductors as p-type SiC [ 33,34 ] where the estimated acceptor density could exceed the chemical density of the Al acceptor impurities and in the modeling of transport properties a semi-empirical r * H parameter is used [ 35 ]. 3.…”

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

“…Through Hall measurement on the Van der Pauw test structure, the activated aluminum is only 5% of the total dose for the room temperature implantation sample, whereas it is 12% for the 500 °C implantation sample. If corrected data rH is used, considering the results in the literature [ 21 , 22 , 23 ], a different active ratio is obtained and the actual active ratio of the room temperature decreases from 5% to 2.5%. While the actual active ratio of the high temperature is decreased from 12% to 6%.…”

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

“…The value for ionization energy, 0.24 eV, which increases with fluence, is higher than the predicted and empirical values at these dopant concentrations (≈0.15–0.22 eV). [ 38,39 ] As the SiC is irradiated, the data can no longer be effectively modeled using only three parameters. A five‐parameter model ( N Al , E Al , N def , E def , and N comp ) which accounts for defects levels can be used.…”