Electrical and optical artificial synapses properties of TiN-nanoparticles incorporated HfAlO-alloy based memristor

Mahata, Chandreswar; Kim, Sungjun

doi:10.1016/j.chaos.2021.111518

Cited by 9 publications

(7 citation statements)

References 72 publications

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“…Although due to higher atomic concentration of Ti from Au/Ti top electrode is dominated, the Ti intensity due to the presence of TiN-NP inside the HfAlO x matrix was suppressed. In the previous work, the Ti presence was clearly demonstrated by the cross-sectional STEM image, core-level XPS spectra of TiN-NP, and elemental profile of Ti across the cross section of ITO/HfAlO x /TiN-NP/HfAlO x /ITO RRAM device [ 24 ]. In the supporting information, to observe the distribution of TiN-NPs surface morphology on the TiN-NP/HfAlO x /ITO structure, scanning electron microscope (SEM) image is presented in Additional file 1 : Fig.…”

Section: Resultsmentioning

confidence: 99%

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Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

et al. 2022

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Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization behavior to achieve the high-density memory application. Stepwise change in conductance under DC and pulse voltage confirms the quantized conductance states with integer and half-integer multiples of G0. Reactive TiN-NPs inside the switching layer helps to form and rupture the atomic scale conductive filaments due to enhancing the local electric field inside. Bipolar resistive switching characteristics at low SET/RESET voltage were obtained with memory window > 10 and stable endurance of 103 cycles. Short-term and long-term plasticities are successfully demonstrated by modulating the pre-spike number, magnitude, and frequency. The quantized conductance behavior with promising synaptic properties obtained in the experiments suggests HfAlOx/TiN-NP/HfAlOx switching layer is suitable for multilevel high-density storage RRAM devices.

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Section: Resultsmentioning

confidence: 99%

“…Nearly 5 nm of HfAlO x (TMA 1 + TEMAH 2) was deposited before TiN deposition. HfAlO x alloy ALD deposition details have been given in earlier work [ 24 ]. After deposition of HfAlO x alloy layer, 20 cycles of TiN were deposited with a showerhead plasma-type ALD by titanium tetrachloride (TiCl 4 ) and NH 3 as precursors.…”

Section: Methodsmentioning

confidence: 99%

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

et al. 2022

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“…However, for partial two‐ and three‐terminal optical IMCS synapses with semiconductive oxide materials, although low‐dimensional materials were included for functional layers, their all‐in‐one IMCS performance was considered to be associated with the ionized and deionized process of oxygen vacancies induced by external optical stimuli. [ 35,120,121 ] The photoinduced ionization resulted in the neutral oxygen vacancies with a positive charge due to the persistent photoconductivity (PPC) characteristic of the oxide semiconductor and these ionized vacancies transferred back to the neutralized state after removing the optical stimuli. [ 35,120–122 ] The ionized and deionized processes could be represented by the following equations [ 35 ]

{normalV}_{normalO}^{0} + O_{WB}^{2 -} + 2 {normalh}^{+} \overset{Ionization}{\to} \frac{{normalV}_{normalO}^{2 +}}{{normalO}_{normali}} + 2 {normale}^{-}

\frac{{normalV}_{normalO}^{2 +}}{{normalO}_{normali}} + 2 {normale}^{-} + E_{normala} \overset{Deionization}{\to} \frac{{normalV}_{normalO}}{{normalO}_{normali}}

where

{normalV}_{normalO}^{0}

is the insulating oxygen vacancy without charge,

{normalO}_{WB}^{2 -}

is the bound oxygen,

{normalh}^{+}

is the hole with a positive charge,

{normalO}_{normali}

is the interstitial oxygen,

{normale}^{-}

is the electron with a negative charge, and

E_{normala}

is the activation energy.…”

Section: Mechanism Of Optical Imcs Synapses With Low‐dimensional Mate...mentioning

confidence: 99%

“…Mahata et al reported a two‐terminal optical IMCS synapse with 0D TiN‐NPs embedded in the HfAlO switching layer. [ 121 ] With the optoelectric field brought by the optical stimuli, rupture and formation processes of conductive filament (CF)‐based ionized oxygen vacancies were limited by 0D TiN‐NPs. Ionization phenomena of oxygen vacancies occurred near the interface between HfAlO and TiN‐NPs; partial oxygen vacancies with a positive charge formed CFs to connect the top and bottom electrodes of the device, which enhanced the current and modulated the conductance state.…”

Section: Mechanism Of Optical Imcs Synapses With Low‐dimensional Mate...mentioning

confidence: 99%

“…Hence, the change of CFs with ionization and deionization processes based on oxygen vacancies could realize the modulation of synaptic weight. [ 121 ] Duan et al also investigated the optical IMSC performance of a three‐terminal transistor with perovskite (PVK) NPs and IGZO materials. [ 122 ] Due to the built‐in electric field induced by optical stimuli, photoinduced electron–hole pairs were separated.…”

Section: Mechanism Of Optical Imcs Synapses With Low‐dimensional Mate...mentioning

confidence: 99%

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Emerging Optical In‐Memory Computing Sensor Synapses Based on Low‐Dimensional Nanomaterials for Neuromorphic Networks

Shen

Zhao

Kang

et al. 2022

Advanced Intelligent Systems

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Emerging optical synapses with in‐memory computing sensor (IMCS) performance are considered to be one of the most effective candidates to circumvent the bottleneck of the current Von Neumann structure while developing neuromorphic systems with higher effectiveness and lower energy consumption. Biomimetic properties of optical IMCS synapses in function and form indicate the higher requirements for utilized functional materials, such as stronger optical sensitivity and lower energy dissipation. Because of properties with high optical‐sensitivity efficiency and excellent electrical conductivity, low‐dimensional nanomaterials have received tremendous interest in modulating optical‐induced synaptic plasticity and emulating optical‐triggered neuromorphic activity of optical IMCS synapses. Herein, a comprehensive summary of optical IMCS synapses based on low‐dimensional nanomaterials is introduced systematically for the first time, including 0D, 1D, and 2D materials. In addition, the content of biomimetic synaptic characteristics, materials classification, operation mechanism, and neuromorphic applications of optical IMCS synapses based on low‐dimensional nanomaterials are also summarized in this work. At last, the challenges and outlook related to artificial optical IMCS synapses with low‐dimensional nanomaterials are provided.

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Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

Yang

Kim

et al. 2023

Adv Materials Inter

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To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential. However, due to the stochastic nature of filament production, this filamentary type resistive switching has an inherent limitation, which entails the unpredictability of the driving voltage and resistance states. Several strategies such as doping, research into multilayer stacks, and interface engineering, are suggested to tackle this challenge. This work fabricates a CMOS‐compatible TiN/HfOx/TiN‐NCs (nanocrystals)/HfOx/TiN RRAM to implement analog resistive switching and advance the development of the synaptic device. Specifically, atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) are utilized to observe the formation of TiN nanocrystals, which play a crucial role in the enhancement of resistive switching. By comparing HfOx–based RRAM devices with and without NCs, the DC I–V curves, retention, endurance, and switching speed are properly examined. Interestingly, it is found that the TiN/HfOx/TiN‐NCs/HfOx/TiN device is more appropriately utilized as an artificial synapse in neuromorphic systems mainly due to its stable and reliable resistive switching properties. Finally, this work demonstrates well‐controlled resistive switching 3D vertical RRAM with TiN‐NCs, which is particularly suitable for high‐density memory.

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Electrical and optical artificial synapses properties of TiN-nanoparticles incorporated HfAlO-alloy based memristor

Cited by 9 publications

References 72 publications

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Emerging Optical In‐Memory Computing Sensor Synapses Based on Low‐Dimensional Nanomaterials for Neuromorphic Networks

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

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