2010
DOI: 10.1016/j.solidstatesciences.2010.02.001
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Electrical and interface state density properties of polyaniline–poly-3-methyl thiophene blend/p-Si Schottky barrier diode

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Cited by 49 publications
(16 citation statements)
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“…This mechanism might be electron tunneling between the particles. Besides this, various other phenomena like barrier height inhomogeneity, recombination-generation, 3 bulk resistance, and Poole-Frenkle effects may be responsible for the observed high values of ideality factors.…”
Section: Resultsmentioning
confidence: 99%
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“…This mechanism might be electron tunneling between the particles. Besides this, various other phenomena like barrier height inhomogeneity, recombination-generation, 3 bulk resistance, and Poole-Frenkle effects may be responsible for the observed high values of ideality factors.…”
Section: Resultsmentioning
confidence: 99%
“…Another advantage of the polymers is that it does not need surfaces with regularity at the atomic level in contrast to inorganic semiconductors. 3 In this paper, we present the preparation and characterization of Schottky barriers based on PANI-poly (methylmethacrylate) (PMMA) blend. Various junction parameters have been calculated using current density-voltage (J-V) in the dark and under illumination, and capacitance-voltage (C-V) characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…The ideality factor obtained from dV / d(ln I)-I plot is seen to be greater than that obtained from lnI-V characteristic. The difference between the values of the ideality factors can be attributed to the fact that the first one is only under the effect of the interfacial properties and the second one is under the effect of both the interfacial properties and the series resistance [8]. In addition, the R s and Φ b0 values were calculated from the slope and intercept of H(I) versus I plot and were found to be 206 Ω and 0.85 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The electrical properties of metal/semiconductor (MS) structures can be modified by introducing organic layer on semiconductor materials and have been shown to exhibit promising characteristics for diode applications [7,8].…”
Section: Introductionmentioning
confidence: 99%
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