Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer

Manjunath, V.; Reddy, V. Rajagopal; Reddy, P.R. Sekhar; Janardhanam, V.; Choi, Chel‐Jong

doi:10.1016/j.cap.2017.03.023

Cited by 43 publications

(15 citation statements)

References 44 publications

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“…The value of RR for the MPS diode was also found significantly higher than the MS diode. In recent years, similar results have been reported by various studies [31][32][33][34][35][36][37][38][39][40].…”

Section: Electrical Characteristicssupporting

confidence: 87%

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

et al. 2020

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The present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

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Section: Electrical Characteristicssupporting

confidence: 87%

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

et al. 2020

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“…In some studies, it has been observed that Sm 2 O 3 and V 2 O 5 thin films have polycrystalline structures. Oxygen vacancies easily drift through grain boundaries and dislocations, resulting in stable resistive switching behavior [7][8][9][10]. In studies of vanadium oxide films, it has been observed that these films have a stable reversible switching characteristic, and the current can be controlled by setting the current limit during the set process to reduce the power consumption [8].…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, Sm 2 O 3 , one of the rare earth oxides (REOs), has a large energy band gap, high thermal stability, good chemical stability, good thermal stability, low leakage current density, high breakdown electric field, and low trapping rates. Because of these superior properties, Sm 2 O 3 has been investigated as a high-k material which could replace SiO 2 in Complementary Metal-Oxide-Semiconductor (CMOS) devices [9][10][11][12][13]. There are two different resistive switch behaviors in RRAMs: unipolar resistive switching (URS) behavior and bipolar resistive switching (BRS) behavior [14].…”

Section: Introductionmentioning

confidence: 99%

Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

Lin

Chen

2019

Crystals

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: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.

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“…Venkata Prasad et al [54] showed that the N SS for the Au/Y 2 O 3 /n-GaN MIS diode varied from 6.268 × 10 12 to 2.094 × 10 12 eV −1 cm −2 . Manjunath et al [55] demonstrated the N SS being varied from 9.753 × 10 12 to 1.990 × 10 11 eV −1 cm −2 for the Au/Sm 2 O 3 /n-GaN MIS structure. The estimated interface state density of the Au/Fe 3 O 4 /n-GaN heterojunction is in a good agreement with that of the reported values.…”

Section: Resultsmentioning

confidence: 99%

Statistical distribution of barrier heights, current conduction mechanism and voltage-dependent capacitance–frequency characteristics of Au/Fe3O4/n-GaN heterojunction

Uma

Reddy

2019

SN Appl. Sci.

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This work demonstrates the modification of electrical parameters of the Au/n-GaN Schottky junction (SJ) by a thin magnetite metal (Fe 3 O 4) interlayer in between the Au and n-GaN substrates. The current-voltage (I-V), voltage-dependent capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of the Au/Fe 3 O 4 /n-GaN heterojunction (HJ) are systematically studied. Using statistical analysis, the mean barrier heights and ideality factors are found to be 0.70 eV and 1.62 for the SJ and 0.84 eV and 1.87 for the HJ, respectively. It is noticed that the mean barrier height of Au/ Fe 3 O 4 /n-GaN HJ increases as compared that of the Au/n-GaN SJ, indicating the Fe 3 O 4 interlayer modified the barrier height. The SJ revealed a transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages. However, the HJ exhibited Schottky emission over whole voltage range. It is observed that the higher values of capacitance decrease at low frequencies that are attributed to the excess capacitance resulting from the interface states in equilibrium with the n-GaN which could respond the ac signal. The interface states density (N SS) and relaxation time (τ) of the Au/Fe 3 O 4 /n-GaN HJ are estimated from C-f plots, respectively. The N SS reveals that the interface states decrease with voltage from the bottom of the conduction band toward the mid-gap. Keywords Fe 3 O 4 interlayer • n-GaN substrate • Voltage-dependent C-f and G-f properties • Interface state density • Relaxation time

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Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer

Cited by 43 publications

References 44 publications

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

Statistical distribution of barrier heights, current conduction mechanism and voltage-dependent capacitance–frequency characteristics of Au/Fe3O4/n-GaN heterojunction

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