Electrical and ferromagnetic properties of p-type ZnO thin films with and without the addition of graphene prepared by the sol-gel method

Lin, Yow−Jon; Chang, Hsing Cheng; Chuang, C.Y.; Lu, Ping-En; Huang, Jui Hsien

doi:10.1016/j.jallcom.2021.161796

Cited by 3 publications

(1 citation statement)

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“…Zinc oxide thin films have been prepared by various methods, such as nebulizer spray method [5][6][7], chemical vapor deposition [8,9], chemical bath deposition [10,11], sol-gel [12,13], thermal evaporation [14,15], sputtering [16,17] and pulsed laser deposition [18,19] have been deposited for the prodcution of ZnO films. Nebulizer spray pyrolysis techniques has received a little bit of more advantages due to their better homogeneity, stoichiometry control, low cost effectiveness, low processing temperature, simplicity and easier deposition of large area films, and compared to other methods, which allow the possibility of prepared films with the required properties for various applications.…”

Section: Introductionmentioning

confidence: 99%

Low-cost nebulizer spray deposited conduction mechanism of thin film ZnO nanoparticles

Amudhavalli¹,

Mariappan²,

Prasath³

2023

JOR

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The Zinc Oxide (ZnO) thin films have been deposited on glass substrate at different temperature from 300 to 500 o C by nebulizer spray pyrolysis technique. The prepared films were characterized by X-Ray diffraction (XRD), High resolution scanning electron microscope (HRSEM), Energy dispersive analysis by X-rays (EDAX), Photoluminescence (PL), UV-Vis-NIR spectrometer and impedance spectroscopy, respectively. The XRD confirms that the films are polycrystalline in nature with hexagonal wurtzite crystal structure with (002) plane as preferential orientation. The various parameters such as crystallite size, micro strain, and dislocation density were calculated from X-ray diffraction. HR-SEM images show smooth, tiny grains and dense morphology. The PL studies exhibits two emission peaks one at 389 nm corresponding to band gap excitonic emission and another located at 490 nm due to the presence of singly ionized oxygen vacancies. The UV-Vis-NIR spectrometer confirms the possibility of good transparent ZnO films with an average transmission of about ~85-95% in the visible region and optical band gap shifted from 3.37 eV to 3.2 eV with increase in temperature and which is supported by PL study. The semiconductor bahaviour and activation energy of these films have been confirmed by impedance spectroscopy measurements.

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