Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)

Baudot, S.; Andrieu, F.; Faynot, O.; Eymery, J.

doi:10.1016/j.sse.2010.04.032

Cited by 15 publications

(2 citation statements)

References 39 publications

(50 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be realized using tensile strained silicon-on-insulator substrates (SSOI), which combine strained Si and Si-on-insulator technologies and eliminate the difficulties associated with SiGe layers (high leakage current, Ge diffusion, and enhanced n-type dopant diffusion). Recently, these characteristics were demonstrated to yield higher-performance fully depleted MOSFETs compatible with the 22 nm technology node [21]. Expectedly, nanoscale patterning-a crucial step in device processing-was found to induce partial and nonuniform relaxation of the strain in SSOI-based devices [12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer

Moutanabbir¹,

Reiche²,

Zakharov³

et al. 2010

Nanotechnology

View full text Add to dashboard Cite

We provide evidence of nanopatterning-induced bending of an ultrathin tensile strained silicon layer directly on oxide. This strained layer is achieved through the epitaxial growth of silicon on a Si(0.84)Ge(0.16) virtual substrate and subsequent transfer onto a SiO(2)-capped silicon substrate by combining hydrophilic wafer bonding and the ion-cut process. Using high resolution transmission electron microscopy, we found that the upper face of the strained silicon nanostructures fabricated from the obtained heterostructure using electron beam lithography and dry reactive ion etching displays a concave shape. This bending results from the free-surface-induced strain relaxation, which implies lattice out-of-plane expansion near the edges and concomitant contraction at the center. For a ∼ 110 nm × 400 nm × 20 nm nanostructure, the bending is associated with an angle of 1.5° between the [Formula: see text] vertical atomic planes at the edges of the ∼ 110 nm side. No bending is, however, observed at the strained Si/SiO(2) interface. This phenomenon cannot be explained by the classical Stoney's formula or related formulations developed for nanoscale thin films. Here we employed a continuum mechanical approach to describe these observations using three-dimensional numerical calculations of relaxation-induced lattice displacements.

show abstract

Section: Introductionmentioning

confidence: 99%

Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer

Moutanabbir¹,

Reiche²,

Zakharov³

et al. 2010

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…4 The latest developments have led to a high-performance 14 nm-technology using Fully Depleted Silicon On Insulator (FDSOI) transistors and the integration of a strained SiGe channel in p-type MOSFETs. [5][6][7] The choice of strained SiGe as a channel was driven by two factors : firstly, hole mobility in Germanium is higher than in Silicon and secondly, heteroepitaxy of SiGe on Si yields a biaxial compressive stress in the layer, which also enhances the hole mobility of a SiGe p-MOS channel. 8 In general, the mechanical loading of the transistor channel can be performed by four basic methods by using a: (i) Contact-Etch Stop Layer (CESL), e.g.…”

Section: Introductionmentioning

confidence: 99%

Scanning x-ray microscopy imaging of strain relaxation and fluctuations in thin patterned SiGe-on-insulator nanostructures

Girard

Berthelon

Andrieu

et al. 2021

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Strain engineered performance enhancement in SiGe channels for p-MOSFETs is one of the main drivers for the development of microelectronic technologies. Thus, there is a need for precise and accurate strain mapping techniques with small beams. Scanning X-Ray Diffraction Microscopy (SXDM) is a versatile tool that allows measuring quantitative strain maps on islands as thin as 13 nm quickly. From the high velocity and robustness of the technique, statistical information can be extracted for a large number of individual islands of different sizes. In this paper, we used the advantages of SXDM to demonstrate the effectiveness of the condensation method used to grow ultra-thin layers of strained SiGe and to determine their relaxation lengths at patterned interfaces.

show abstract

Semiconductor Templates for the Fabrication of Nano‐Objects

Eymery

Masson

Sahaf

et al. 2011

Mechanical Stress on the Nanoscale

View full text Add to dashboard Cite

Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)

Cited by 15 publications

References 39 publications

Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer

Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer

Scanning x-ray microscopy imaging of strain relaxation and fluctuations in thin patterned SiGe-on-insulator nanostructures

Semiconductor Templates for the Fabrication of Nano‐Objects

Contact Info

Product

Resources

About