Electrical and chemical analysis of Ti/Au contacts toβ-Ga2O3

Lyle, Luke A. M.; Back, Tyson C.; Bowers, Cynthia T.; Green, Andrew J.; Chabak, Kelson D.; Dorsey, Donald L.; Heller, Eric R.; Porter, Lisa M.

doi:10.1063/5.0051340

Cited by 27 publications

(16 citation statements)

References 35 publications

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“…Si-ion implantation doping and regrowth have been utilized to form n + -Ga 2 O 3 ohmic regions [52,59,60]. The post-metallization annealing provides short-range intermixing of Ti and Ga 2 O 3 at the interface, resulting in further reduction in contact resistance and improvement in reliability and endurance [61][62][63]. The routine process developed in the author's group based on the Si-ion implantation doping described in Section 5.1.1 and postmetallization annealing can provide a low specific contact resistance of less than 1×10 −5 cm 2 .…”

Section: Ohmic Contactmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

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Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β-Ga2O3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β-Ga2O3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group.

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Section: Ohmic Contactmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

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“…As established here and by other authors, metal–semiconductor interfaces often exhibit reactions either at room temperature or at elevated temperatures, and currently, the stability of various commonly employed metallizations to β-Ga 2 O 3 is not understood. There is ample evidence in the literature of room temperature (Cr, Ti, − and now Au) and elevated temperature (Pd, Ni , ) reactions of common metallizations to β-Ga 2 O 3 . However, there is no report of a Ni/β-Ga 2 O 3 reaction for Ni deposited at room temperature.…”

Section: Discussionmentioning

confidence: 99%

“…Further, due to applications for β-Ga 2 O 3 under high temperatures, high electric fields, and high current densities, there is a significant desire to develop thermally stable contacts to withstand these conditions . However, many metals deposited on β-Ga 2 O 3 have exhibited chemical reactions in the as-deposited state such as Ti − and Cr and others have exhibited chemical reactions at elevated temperatures, including Pd and Ni. , These chemical reactions have robust electrical , and thermal consequences on the diode properties.…”

Section: Introductionmentioning

confidence: 99%

“…43 However, many metals deposited on β-Ga 2 O 3 have exhibited chemical reactions in the as-deposited state such as Ti 44−46 and Cr 47 and others have exhibited chemical reactions at elevated temperatures, including Pd 48 and Ni. 49,50 These chemical reactions have robust electrical 44,48 and thermal 47 consequences on the diode properties.…”

Section: ■ Introductionmentioning

confidence: 99%

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Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Lyle

House

Yang

et al. 2022

ACS Appl. Electron. Mater.

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Au/β-Ga2O3 Schottky contacts deposited at room temperature via electron-beam evaporation are characterized electrically with current density–voltage (J–V) and capacitance–voltage (C–V) measurements. The ideality factor and Schottky barrier heights measured from J–V and C–V are determined to be 1.32, 1.37 eV, and 1.98 eV, respectively. Due to the peculiarities of the electrical properties of the Au/β-Ga2O3 Schottky contacts, scanning transmission electron microscopy (STEM) was performed. High-angle annular dark-field (HAADF)-STEM imaging reveals an inhomogeneous chemical reaction occurred at the metal–semiconductor interface. The reaction is signified by void formation 5–20 nm below the interface, Ga diffusion into Au at the interface, and Ga interstitial diffusion toward the interface. Energy-dispersive X-ray spectroscopy (EDS) mapping shows Ga diffusion into the Au contact region accompanied by a transitional region of 4–5 nm.

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“…Lyle et al in 2021 investigated the chemical properties of Ti/(010)β-Ga 2 O 3 and Ti/(001)β-Ga 2 O 3 interfaces by X-ray photoelectron spectroscopy (XPS) as a function of annealing temperature between 150 and 670 °C . It was observed that Ti partially oxidized at both interfaces in as-deposited conditions, and a higher rate of oxidation was observed on the (001) β-Ga 2 O 3 epilayer surface.…”

Section: Ohmic Contacts To Ga2o3mentioning

confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Sheoran

Kumar

Singh

2022

ACS Appl. Electron. Mater.

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Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect transistors (FETs). This is due to its excellent material properties such as ultrawide bandgap of 4.6–4.9 eV, high breakdown electric field of 8 MV/cm, very high Baliga’s figure of merit (BFOM) and mature technology for large bulk single crystals, and epitaxial techniques with controllable n-type doping. Ohmic and rectifying metal–semiconductor contacts on β-Ga2O3 have been developed over the past decade. This work comprehensively reviews the recent development of metal–semiconductor contacts on β-Ga2O3. We start with basic concepts of metal–semiconductor contacts, which is followed by summarizing the current literature on ohmic and Schottky contacts on β-Ga2O3. Finally, the status of high-power Schottky diode contact on β-Ga2O3 is presented.

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Electrical and chemical analysis of Ti/Au contacts toβ-Ga₂O₃

Cited by 27 publications

References 35 publications

β-Ga2O3 material properties, growth technologies, and devices: a review

β-Ga2O3 material properties, growth technologies, and devices: a review

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

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Electrical and chemical analysis of Ti/Au contacts toβ-Ga2O3

Cited by 27 publications

References 35 publications

β-Ga2O3 material properties, growth technologies, and devices: a review

β-Ga2O3 material properties, growth technologies, and devices: a review

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Contact Info

Product

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About

Electrical and chemical analysis of Ti/Au contacts toβ-Ga₂O₃

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications