Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC

Laube, Michael; Schmid, Frank; Pensl, Gerhard; Wagner, G.; Linnarsson, Margareta K.; Maier, M.

doi:10.1063/1.1479462

Cited by 112 publications

(100 citation statements)

References 19 publications

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“…[6,9] The LOPC line allows one to measure carrier density and mobility. [10 -13] Its line-shift can be used to characterize ion-implanted SiC with different annealing temperatures to deduce the free-carrier density [13,14] and the spatial distribution of the dopants. [6] Increasing temperature causes a distortion of the lattice and thus, a change in population of the phonon bands that results in relative line-shifts and line-broadening.…”

Section: Introductionmentioning

confidence: 99%

Temperature‐depending Raman line‐shift of silicon carbide

Bauer

Gigler

Huber

et al. 2009

J Raman Spectroscopy

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Silicon carbide (SiC) is often used for electronic devices operating at elevated temperatures. Spectroscopic temperature measurements are of high interest for device monitoring because confocal Raman microscopy provides a very high spatial resolution. To this end, calibration data are needed that relate Raman line-shift and temperature. The shift of the phonon wavenumbers of single crystal SiC was investigated by Raman spectroscopy in the temperature range from 3 to 112 • C. Spectra were obtained in undoped 6H-SiC as well as in undoped and nitrogen-doped 4H-SiC. All spectra were acquired with the incident laser beam oriented parallel as well as perpendicular to the c-axis to account for the anisotropy of the phonon dispersion. Nearly all individual peak centers were shifting linearly towards smaller wavenumbers with increasing temperature. Only the peak of the longitudinal optical phonon A 1 (LO) in nitrogen-doped 4H-SiC was shifting to larger wavenumbers. For all phonons, a linear dependence of the Raman peaks on both parameters, temperature and phonon frequency, was found in the given temperature range. The linearity of the temperature shift allows for precise spectroscopic temperature measurements. Temperature correction of Raman line-shifts also provides the ability to separate thermal shifts from mechanically induced ones.

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Section: Introductionmentioning

confidence: 99%

Temperature‐depending Raman line‐shift of silicon carbide

Bauer

Gigler

Huber

et al. 2009

J Raman Spectroscopy

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“…Especially for blocking voltages higher than 3 kV, bipolar devices are desirable [3]. Therefore, in addition to the well explored n-type layers an effective p-type doping is needed [4][5][6].…”

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confidence: 99%

Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide

Rambach

Bauer

Ryssel

2008

Physica Status Solidi (b)

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“…N or P ions are used to form the n-type region of SiC. High-dose implantation of P ions can form a low-resistance region having a sheet resistance of 50 Ω/" or less [3,4].…”

Section: Introductionmentioning

confidence: 99%

High‐voltage 4H‐SiC pn diodes fabricated by p‐type ion implantation

Negoro

Kimoto

Matsunami

2003

Electron Comm Jpn Pt II

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SUMMARYWe formed a low-resistance p region by high-dose aluminum (Al) ion implantation in the 4H-SiC (0001) face, and fabricated and characterized planar pn diodes by Al or boron (B) ion implantation. In Al ion implantation, the minimum sheet resistance of 3.6 kΩ/" (p-type) is obtained by high-temperature implantation and high-temperature annealing. Excellent rectification was verified in planar pn diodes, in which the surface p + layer was formed by hightemperature implantation of Al ions and the p layer was formed by room-temperature implantation of high-energy B ions. We achieved a high blocking voltage of 2900 V (90% of the theoretical withstand voltage), a low on-resistance of 8.0 mΩcm 2 , and avalanche breakdown characteristics of a positive temperature coefficient for the blocking voltage. We fabricated a 4H-SiC (112 _ 0) pn diode, which has not been disclosed previously, and obtained a high blocking voltage of 1850 V (70% of the theoretical blocking voltage).

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Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC

Cited by 112 publications

References 19 publications

Temperature‐depending Raman line‐shift of silicon carbide

Temperature‐depending Raman line‐shift of silicon carbide

Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide

High‐voltage 4H‐SiC pn diodes fabricated by p‐type ion implantation

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