Electric-tunable magnetoresistance effect in a two-dimensional electron gas modulated by hybrid magnetic–electric barrier nanostructure

Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

“…Semiconductor GMR is particularly interesting for applications because of the expected ease of integration of associated devices with typical semiconductor electronics3. As a consequence, the study of potential new mechanisms for realizing GMR in semiconductors has been a useful line of basic research78910. Semiconductor GMR in disordered 2D electronic systems has also been a topic of interest from the fundamental physics perspective111213141516171819202122232425262728, providing insight into weak localization1117, weak anti-localization1117, electron-electron interaction-induced magnetoresistance1114151618192223, metal-insulator transitions induced by a magnetic field29, and GMR in the quantum Hall regime3031.…”

“…While previous studies have examined electric field control of magnetoresistance7910, we show that a supplementary dc-current-bias and associated carrier heating in an ac- and dc- current biased high mobility 2DES provides for a current dependent “non-ohmic” decrease in the conductivity with increasing dc current bias in the absence of a magnetic field, and this effect leads to a dc-current tunable GMR in the presence of 100’s-of-millitesla-type magnetic fields. Thus, the effect identifies a simple new method for setting the magnitude of the GMR effect as desired, in a semiconductor system.…”