Electric Field Manipulated Multilevel Magnetic States Storage in FePt/(011) PMN-PT Heterostructure

Abstract

In the current information society, the realization of a magnetic storage technique with energy-efficient design and high storage density is greatly desirable. Here, we demonstrate that, without bias magnetic field, different values of remanent magnetization (M) can be obtained in a FePt/0.7Pb(MgNb)O-0.3PbTiO (PMN-PT) heterostructure by applying a unipolar electric field across the substrate. These multilevel magnetic signals can serve as writing data bits in a storage device, which remarkably increases the storage density. As for the data reading, these multilevel M values can be read nondestructively and distinguishably using a commercial giant magnetoresistance magnetic sensor by converting the magnetic signal to voltage signal. Furthermore, these multilevel voltage signals show good retention and switching property, which enables promising applications in electric-writing magnetic-reading memory devices with low power consumption and high storage density.

Environmentally-friendly magnetoelectric ceramic multilayer composites by water-based tape casting

“…Rationale is to combine ferroelectric and ferromagnetic phases, so that magnetoelectricity is obtained from their interaction, either electrostatic, magnetic or elastic [5,6]. A range of potentially disruptive magnetoelectric thin film and bulk technologies have been proposed [7][8][9][10][11], among which magnetic sensing stands out as the closest to the market [12,13].…”

All-optical vectorial control of multistate magnetization through anisotropy-mediated spin-orbit coupling

“…Thereby, this system has great potentials in multinary data storage and information multiplexing. The state-of-theart strategies for the generations of multilevel magnetic states mainly use the external magnetic or electric field in magnetic multilayer, multiferroic material, artificial ferromagnetic/ferroelectric heterostructure systems [8,48,49]. Some uses light to control the carrier in materials, which relies on the detailed magnetic structures such as the fourfold magnetic anisotropy in (Ga,Mn)As [50], and to use the light-induced spin-polarized currents in the magnetic spin-valve structure ([Co/Pt]/Cu/GdFeCo) [51].…”

Manipulation of Magnetization Reversal by Electric Field in a FePt/(011)PMN-PT/Au

“…In the magnetoelectric (ME) heterostructures with a ferromagnetic (FM) thin film growing on a ferroelectric (FE) substrate (for example, metal/[Pb(Mg 1/3 Nb 2/3 )O 3 ](1-x)-[PbTiO 3 ]x), the strain-mediated converse ME effect acts as a main mechanism [15][16][17][18][19][20], i.e., using the electric-field-induced strain from the FE layer, the magnetism of the FM thin film can be controlled by modifying magnetic anisotropy [21][22][23][24][25][26][27], altering the exchange coupling [28][29][30] or driving magnetic phase transition [31][32][33]. Thus, using an electric field instead of a traditional magnetic field is feasible to manipulate the magnetism in the design of low-power consumption MeRAM devices [21,23,24,[34][35][36][37][38][39][40].…”