Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

Hao, Rujiang; Li, Yi; Liu, Fei; Sun, Yao; Jiayin, Tang; Peizu, Chen; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

doi:10.1016/j.infrared.2015.12.012

Cited by 21 publications

(8 citation statements)

References 16 publications

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“…In recent years, there has been a certain research foundation on the phase change character of Vanadium dioxide (VO 2 ) under high intensity electromagnetic environment, but its high level of metal-insulator transition (MIT) field, generally tens of kV/m, limits its application in the field of electromagnetic protection. [8][9][10] In this letter, a new type of composite energyselective surface (CESS) which use the diodes to induce VO 2 is proposed. By taking advantage of the uneven electric field distribution of the CESS in application, greatly reduce the MIT field of VO 2 with the help of a diode whose conduction electric field is much smaller than the MIT field of VO 2 , which also greatly reduces the manufacturing cost of ESS.…”

Section: Introductionmentioning

confidence: 99%

A composite energy‐selective surface based on diode‐induced VO₂ conduction for the applications of adaptive electromagnetic protection

Chen,

Cheng,

Min

et al. 2023

Micro & Optical Tech Letters

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In this letter, a composite energy selective surface (CESS) using diode to induce VO2 is proposed. The CESS is composed of periodic metal meshes connected with PIN diodes and VO2 in rows and the CESS is embedded in a metal window. VO2 can be induced by using the properties of uneven distribution of induced electric field on the CESS and the conduction field of diode is smaller than that of VO2, so as to reduce the metal‐insulator transition field of it. When the shielding efficiency (SE) reaches 10 dB, the incident field of CESS would be reduced by 72.95% compared with the ESS using VO2 (V‐ESS). Meanwhile, compared with the ESS using diode (D‐ESS), the number of diode in CESS is reduced by 92%, greatly reducing the manufacturing cost. Furthermore, the design of CESS with different incident field when SE reaches 10 dB can be realized more flexibly according to different structures, while the maximum SE can reach 20.94 dB.

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Section: Introductionmentioning

confidence: 99%

A composite energy‐selective surface based on diode‐induced VO₂ conduction for the applications of adaptive electromagnetic protection

Chen,

Cheng,

Min

et al. 2023

Micro & Optical Tech Letters

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“…High transparency in a wide spectral range and low resistivity value are attractive advantages in view of their further research and applications (Hadi Ali et al, 2018;Voisin et al, 2018;Kim et al, 2018;Lee et al, 2019). Currently, the most important and commonly used thin-film TCOs are those doped with tin, that is, indium tin oxide (ITO) (Hadi Ali et al, 2018;Voisin et al, 2018;Kim et al, 2018;Lee et al, 2019) and fluorine doped tin oxide (Hao et al, 2016). Other examples of TCOs that are currently in focus of the research are based on doped zinc oxide, for example, aluminium doped zinc oxide (Wang et al, 2018), indium zinc oxide (Kim et al, 2015), gallium doped zinc oxide (Peng et al, 2016), indium gallium zinc oxide (Wu et al, 2016) or gallium doped magnesium zinc oxide (Lu et al, 2013).…”

Section: Introductionmentioning

confidence: 99%

Effect of thickness on optoelectronic properties of ITO thin films

Mazur

Pastuszek

Wojcieszak

et al. 2020

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Purpose Indium tin oxide (ITO) is a material belonging to the group of transparent conductive oxides, which are widely used in many fields of technology including optoelectronics and photovoltaics. However, the properties of ITO thin films depend on many factors. Therefore, the aim of the study was thorough investigation of the properties of sputtered ITO thin films of various thicknesses. Design/methodology/approach ITO coatings were deposited by magnetron sputtering in pure argon atmosphere using ceramic ITO target. Various deposition times resulted in obtaining thin films with different thickness, which had significant influence on the optoelectronic properties of deposited coatings. In this work the results of investigation of structural, surface, optical and electrical properties were presented. Findings Increase of the coating thickness caused change of the microstructure from amorphous to nanocrystalline and occurrence of grains with a size of 40 to 60 nm on their surface. Moreover, the fundamental absorption edge was red-shifted, whereas the average transmission in the visible wavelength range remained similar. Increase of the thickness caused considerable decrease of the sheet resistance and resistivity. It was found that even thin films with a thickness of 10 nm had antistatic properties. Originality/value The novelty and originality of presented work consists in, among other, determination of antistatic properties of ITO thin films with various sheet resistances that are in the range typical for dielectric and semiconducting material. To date, there are no reports on such investigations in the literature. Reported findings might be very helpful in the case of, for example, construction of transparent antireflective and antistatic multilayers.

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“…Vanadium dioxide (VO 2 ) is one of the most interesting smart materials for its reversible metal-insulator transition (MIT) near room temperature (ζ c = 68 • C) [1], in which optical, electrical, and other physical properties (transmittance, reflectance, emittance, refractive index, electrical resistivity etc.) [2,3] will be sharp changed by external stimuli (applied field or voltage [4], incident light [5], temperature variation [6], mechanical stress [7], pressure [8], etc.) in the transition process.…”

Section: Introductionmentioning

confidence: 99%

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

et al. 2019

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Although Vanadium dioxide (VO2) has a potential application value for smart energy efficient windows because of its unique phase transition characteristic, there are still many obstacles that need to be overcome. One challenge is to reduce its high transition temperature (ζc = 68 °C) to near room temperature without causing its phase transition performance degradation. In this paper, a novel method was employed that covered a 3 nm ultra-thin heavy Cr-doped VO2 layer on the pure VO2 films. Compared with the as-grown pure VO2, obviously, phase transition temperature decreasing from 59.5 °C to 48.0 °C was observed. Different from previous doping techniques, almost no phase transition performance weakening occurred. Based on the microstructure and electrical parameters measurement results, the mechanism of ζc reducing was discussed. The upper ultra-thin heavy Cr-doped layer may act as the induced role of phase transition. With temperature increasing, carrier concentration increased from the upper heavy Cr-doped layer to the bottom pure VO2 layer by diffusion, and induced the carrier concentration reach to phase transition critical value from top to bottom gradually. The present method is not only a simpler technique, but also avoids expensive alloy targets.

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Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

Cited by 21 publications

References 16 publications

A composite energy‐selective surface based on diode‐induced VO₂ conduction for the applications of adaptive electromagnetic protection

A composite energy‐selective surface based on diode‐induced VO₂ conduction for the applications of adaptive electromagnetic protection

Effect of thickness on optoelectronic properties of ITO thin films

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

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Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

Cited by 21 publications

References 16 publications

A composite energy‐selective surface based on diode‐induced VO2 conduction for the applications of adaptive electromagnetic protection

A composite energy‐selective surface based on diode‐induced VO2 conduction for the applications of adaptive electromagnetic protection

Effect of thickness on optoelectronic properties of ITO thin films

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

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A composite energy‐selective surface based on diode‐induced VO₂ conduction for the applications of adaptive electromagnetic protection

A composite energy‐selective surface based on diode‐induced VO₂ conduction for the applications of adaptive electromagnetic protection