Effect of thickness on optoelectronic properties of ITO thin films

Mazur, М.; Pastuszek, Roman; Wojcieszak, Damian; Kaczmarek, Danuta; Domaradzki, J.; Obstarczyk, Agata; Lubańska, Aneta

doi:10.1108/cw-11-2019-0170

Cited by 7 publications

(5 citation statements)

References 42 publications

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“…As mentioned in previous studies, the conductivity of ITO electrodes prepared via sputtering without post-annealing treatment tends to decrease as the thickness of the thin film decreases. For instance, M. Mazur reported a remarkable decline in ITO electrode conductivity from 0.17 S/cm (at 270 nm) to 1.69 × 10 −4 S/cm (at 30 nm) [42]. This indicates that a simple post-annealing treatment plays a crucial role in improving the electrical conductivity of an ITO electrode.…”

Section: Resultsmentioning

confidence: 99%

“…of the thin film decreases. For instance, M. Mazur reported a remarkable decline in ITO electrode conductivity from 0.17 S/cm (at 270 nm) to 1.69 × 10 −4 S/cm (at 30 nm) [42]. This indicates that a simple post-annealing treatment plays a crucial role in improving the electrical conductivity of an ITO electrode.…”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile, a high transparency ITO electrode exhibits a low conductivity. For example, M. Mazur and coworkers reported a remarkable decline in an ITO electrode's conductivity from 0.17 S/cm to 1.69 × 10 −4 S/cm when the thickness decreased from 270 nm to 30 nm [42]. Hence, the finding of the common trade-off between optical transmittance in short wavelengths and electrical conductivity has a significant impact on studying PDs in deep-UV detection.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector

Nguyen,

Tran,

Bark

2023

Nanomaterials

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In this study, a highly crystalline and transparent indium-tin-oxide (ITO) thin film was prepared on a quartz substrate via RF sputtering to fabricate an efficient bottom-to-top illuminated electrode for an ultraviolet C (UVC) photodetector. Accordingly, the 26.6 nm thick ITO thin film, which was deposited using the sputtering method followed by post-annealing treatment, exhibited good transparency to deep-UV spectra (67% at a wavelength of 254 nm), along with high electrical conductivity (11.3 S/cm). Under 254 nm UVC illumination, the lead-halide-perovskite-based photodetector developed on the prepared ITO electrode in a vertical structure exhibited an excellent on/off ratio of 1.05 × 104, a superb responsivity of 250.98 mA/W, and a high specific detectivity of 4.71 × 1012 Jones without external energy consumption. This study indicates that post-annealed ITO ultrathin films can be used as electrodes that satisfy both the electrical conductivity and deep-UV transparency requirements for high-performance bottom-illuminated optoelectronic devices, particularly for use in UVC photodetectors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector

Nguyen,

Tran,

Bark

2023

Nanomaterials

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“…R sh values were recorded at 300 K. The R sh of ITO is strongly thickness dependent, the greater the thickness, the lower the resulting R sh ; this trend was already observed in ITO. [ 18 ] Taking into account nanometric thickness of the studied ITO films, resistivity ( ρ ) that is ≈10 −4 Ω cm can be estimated. Li and Lin presented ρ for two ITO films with various thicknesses (125 and 240 nm), ranging at room temperature from 1.89 to 2.63 × 10 −4 Ω cm.…”

Section: Resultsmentioning

confidence: 99%

Experimental Verification of Single‐Type Electron Population in Indium Tin Oxide Layers

Złotnik

Pianelli

Boguski

et al. 2022

Physica Rapid Research Ltrs

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Accurate determination of electronic transport properties of individual transparent conductive oxide layers, namely indium tin oxide (ITO), is essential for further development and design of photonic devices with ITO layer as a tunable ultrafast optoelectronic component. Precise magnetotransport measurements are here implemented to achieve carrier mobility distribution that gives insight into types and characteristics of carrier species. ITO thin films with various sheet resistance of ≈10, 75, and 350 Ω sq−1, respectively, are examined at near‐room temperature. Unimodal mobility distribution is revealed in ITO films, independently on their resistivity, with no evidence of unseparated contributions from surface or interface states. The electron mobility varies depending on ITO's resistivity, ranging from 36.8 to 47.2 cm2 V−1 s−1 at 300 K. Importantly, no minority hole conduction is present. The ITO thin films exhibit solely bulk‐like conduction with an absence of parallel conductions. In addition, the existence of single‐type electron population in ITO that can be viewed as an important validation of exclusively donor‐type defects and/or impurities contributing to total ITO conductivity is experimentally confirmed. These results indicate that ITO can be viewed as an integrated counterpart for photonic metadevices.

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“…Thermally generated free charge carriers caused the resistance decrease. The activation energies (E a ) were in the range from 0.19 eV/K to 0.31 eV/K and were evaluated according to Arrhenius Equation (3) [36,37]:…”

Section: Optical and Electrical Properties Of Hfo2 Thin Filmsmentioning

confidence: 99%

Characterization of Structural, Optical, Corrosion, and Mechanical Properties of HfO2 Thin Films Deposited Using Pulsed DC Magnetron Sputtering

et al. 2023

Self Cite

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Various properties of HfO2, such as hardness, corrosion, or electrical resistance, depend on the method and the conditions of deposition. In this work, a thorough comparison of scarcely investigated mechanical properties of HfO2 thin films deposited with different conditions of reactive magnetron sputtering process is presented. Four thin films were sputtered in processes that varied in plasma ignition method (continuous or sequential) and target–substrate distance. The structural characteristics of the HfO2 thin films were examined using Raman spectroscopy and X-ray diffraction measurements. Furthermore, the optoelectronic properties were determined based on transmittance and current–voltage characteristics. The mechanical properties of the HfO2 thin films were determined using nanoindentation and scratch test. In turn, the corrosion properties were determined by analyzing the voltametric curves. The transparent HfO2 thin films deposited in the continuous process are characterized by better corrosion resistance than the same layer formed in the sequential process, regardless of the target–substrate distance (8 cm or 12 cm). Furthermore, these samples are also characterized by the highest value of Young’s modulus and scratch resistance. The combination of good corrosion and scratch resistance could contribute to the new application of HfO2 as a corrosion protective material.

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Effect of thickness on optoelectronic properties of ITO thin films

Cited by 7 publications

References 42 publications

Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector

Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector

Experimental Verification of Single‐Type Electron Population in Indium Tin Oxide Layers

Characterization of Structural, Optical, Corrosion, and Mechanical Properties of HfO2 Thin Films Deposited Using Pulsed DC Magnetron Sputtering

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