Electric-field-induced low temperature oxidation of tungsten nanowires

Nowak, Carsten; Kirchheim, R.; Schmitz, Guido

doi:10.1063/1.2358203

Cited by 12 publications

(8 citation statements)

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“…The process can be either due to the tunneling of electrons from the metal through the growing oxide, or due to atoms adsorbed onto the oxide surface. In particular, the effect of the presence of an electric field on the oxidation of NWs has been studied 31. The electric field reduces the energy barrier for the migration of metal cation or oxygen anions into or through the growing oxide layer.…”

Section: Resultsmentioning

confidence: 99%

Integration of Thin‐Film‐Fracture‐Based Nanowires into Microchip Fabrication

Jebril¹,

Elbahri²,

Titazu³

et al. 2008

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One-step device fabrication through the integration of nanowires (NWs) into silicon microchips is still under intensive scientific study as it has proved difficult to obtain a reliable and controllable fabrication technique. So far, the techniques are either costly or suffer from small throughput. Recently, a cost-effective method based on thin-film fracture that can be used as a template for NW fabrication was suggested. Here, a way to integrate NWs between microcontacts is demonstrated. Different geometries of microstructured photoresist formed by using standard photolithography are analyzed. Surprisingly, a very simple "stripe" geometry is found to yield highly reproducible fracture patterns, which are convenient templates for fault-tolerant NW fabrication. Microchips containing integrated Au, Pd, Ni, and Ti NWs and their suitability for studies of conductivity and oxidation behavior are reported, and their suitability as a hydrogen sensor is investigated. Details of the fabrication process are also discussed.

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Section: Resultsmentioning

confidence: 99%

Integration of Thin‐Film‐Fracture‐Based Nanowires into Microchip Fabrication

Jebril¹,

Elbahri²,

Titazu³

et al. 2008

Small

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“…It has been shown that a significant impact on the oxidation kinetics can be achieved by either directly applying an external electric field [3][4][5][6][7][8][9][10] or electron bombardment of the oxide surface [11][12][13]. We demonstrate here that the actual value of the self-generated electrostatic potential (designated as the kinetic potential [14]) can deviate from the Mott potential and is tunable by varying the oxygen pressure during oxidation which provides control of the limiting thickness of the oxide film.…”

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confidence: 99%

Tuning the Limiting Thickness of a Thin Oxide Layer on Al(111) with Oxygen Gas Pressure

et al. 2011

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We report an x-ray photoelectron spectroscopy study of the oxidation of Al(111) surfaces at room temperature, which reveals that the limiting thickness of an aluminum oxide film can be tuned by using oxygen pressure. This behavior is attributed to a strong dependence of the kinetic potential on the oxygen gas pressure. The coverage of oxygen anions on the surface of the oxide film depends on the gas pressure leading to a pressure dependence of the kinetic potential. Our results indicate that a significantly large oxygen pressure (>1 Torr) is required to develop the saturated surface coverage of oxygen ions, which results in the maximum kinetic potential and therefore the saturated limiting thickness of the oxide film.

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“…Tungsten, aluminum, and p-doped silicon are chosen as model systems to show that field-induced oxidation is a widely material independent phenomenon. Since ionic species are involved, the driving force and thus the kinetics of the oxidation reaction change significantly under the influence of an electric field as we reported previously [27]. In this study, we focus on the pressure-dependence of the oxidation reaction and deduce the mechanism of field-induced oxidation.…”

Section: Introductionmentioning

confidence: 87%