Electric field effect on low temperature nanoscale oxidation

Nowak, Carsten; Schmitz, Guido; Kirchheim, R.

doi:10.1016/j.susc.2010.01.008

Cited by 9 publications

(5 citation statements)

References 36 publications

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“…Therefore, we suggest that O was present as adsorbent and V is deposited on top of this. The thickness of natural W-oxide is about 3 monolayers [25] and the oxide does not grow at room temperature unless electronic field is applied [26]. It is likely that at certain positions at the V/W interface, nonstoichiometric V-oxide is formed.…”

Section: Resultsmentioning

confidence: 99%

Analysis of deuterium in V–Fe5at.% film by atom probe tomography (APT)

Gemma¹,

Al-Kassab²,

Kirchheim³

et al. 2011

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Analysis of deuterium in V–Fe5at.% film by atom probe tomography (APT)

Gemma¹,

Al-Kassab²,

Kirchheim³

et al. 2011

Journal of Alloys and Compounds

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“…It has been shown that a significant impact on the oxidation kinetics can be achieved by either directly applying an external electric field [3][4][5][6][7][8][9][10] or electron bombardment of the oxide surface [11][12][13]. We demonstrate here that the actual value of the self-generated electrostatic potential (designated as the kinetic potential [14]) can deviate from the Mott potential and is tunable by varying the oxygen pressure during oxidation which provides control of the limiting thickness of the oxide film.…”

mentioning

confidence: 99%

Tuning the Limiting Thickness of a Thin Oxide Layer on Al(111) with Oxygen Gas Pressure

et al. 2011

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We report an x-ray photoelectron spectroscopy study of the oxidation of Al(111) surfaces at room temperature, which reveals that the limiting thickness of an aluminum oxide film can be tuned by using oxygen pressure. This behavior is attributed to a strong dependence of the kinetic potential on the oxygen gas pressure. The coverage of oxygen anions on the surface of the oxide film depends on the gas pressure leading to a pressure dependence of the kinetic potential. Our results indicate that a significantly large oxygen pressure (>1 Torr) is required to develop the saturated surface coverage of oxygen ions, which results in the maximum kinetic potential and therefore the saturated limiting thickness of the oxide film.

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“…Nowak et al . have shown that electron bombardment, providing charges to build up electric field, induces oxide growth on tungsten nanowires at room temperature 29 , 30 . They use the explanation of Mott and Cabrera; the electric field created reduces the energy barriers for the migration of metal cations or oxygen anions into and through the oxide, allowing significant material transport and thus growth of the oxide layer at low temperature.…”

Section: Discussionmentioning

confidence: 99%

Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

Gurban

Petrik

Serényi

et al. 2018

Sci Rep

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Al2O3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10−9 mbar) and formation of amorphous SiO2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al2O3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO2 rich layer has grown into the Al2O3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.

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Electric field effect on low temperature nanoscale oxidation

Cited by 9 publications

References 36 publications

Analysis of deuterium in V–Fe5at.% film by atom probe tomography (APT)

Analysis of deuterium in V–Fe5at.% film by atom probe tomography (APT)

Tuning the Limiting Thickness of a Thin Oxide Layer on Al(111) with Oxygen Gas Pressure

Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

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