2022
DOI: 10.1016/j.apsusc.2021.152094
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Electric field-induced electronic-thermoelectric-optical properties of typical isoelectronic HNC6 monolayers: A theoretical study

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Cited by 8 publications
(19 citation statements)
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“…192m at E = 0.875 V Å À1 for HPC 6 and HPSi 6 , respectively (m = free electron mass). These are much higher than the values predicted for HNC 6 structures [42] and nearly close to the values obtained for PC 6 and AsC 6 structures. [60] To compare the bandgap engineering with other 2D buckled structures in presence of an external electric field, we have calculated the rate of bandgap opening for HPC 6 and HPSi 6 systems which are 0.10 and 0.075 eÅ respectively.…”
Section: Structuressupporting
confidence: 80%
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“…192m at E = 0.875 V Å À1 for HPC 6 and HPSi 6 , respectively (m = free electron mass). These are much higher than the values predicted for HNC 6 structures [42] and nearly close to the values obtained for PC 6 and AsC 6 structures. [60] To compare the bandgap engineering with other 2D buckled structures in presence of an external electric field, we have calculated the rate of bandgap opening for HPC 6 and HPSi 6 systems which are 0.10 and 0.075 eÅ respectively.…”
Section: Structuressupporting
confidence: 80%
“…eV) for HNC 6 structure as reported in the study of Mondal et al [42] There are a few minor peaks around ω = 4 eV for parallel polarization due to π À π Ã interband transition.…”
Section: Optical Propertiessupporting
confidence: 61%
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