Electric Field‐Induced Phase Transition on HPX₆ (X = C, Si, Ge, Sn) Monolayers

Abstract

Herein, the electronic, thermoelectric, and optical properties of semimetallic HPX6 (X = C, Si, Ge, Sn) monolayers are systematically studied under the influence of external electric field in the framework of density functional theory. A band tuning has been achieved in these structures by the application of an external electric field of appropriate strength. It is predicted that Dirac cone splitting is nearly proportional to the external electric field strength. The modulation of electric properties induced by external field can alter the position of chemical potential in the band diagram and brings significant improvement in thermoelectric responses. The application of an external electric field significantly modulates the optical properties. The electric field‐induced HPX6 system provides better thermoelectric and optical response for nanodevice applications.

Electric field modulated electronic, thermoelectric and transport properties of 2D tetragonal silicene and its nanoribbons

“…In essence, the electric field breaks the sublattice symmetry leading to the transformation of the linear bands close to the Fermi level into parabolic ones and an opening of the band gap at the Dirac point occurs. Recently, it has been demonstrated that transverse electric field modulates the electronic properties from semimetallic to semiconducting in buckled HAX 6 (A = N, P, As; X = C, Si, Ge, Sn) monolayers [32,33]. Very recently, Chegel et al studied the fielddependent transport response of TS using a simplified tightbinding (TB) approach [34].…”