Electric‐Field Enhancement Inducing Near‐Infrared Two‐Photon Absorption in an Indium–Tin Oxide Nanoparticle Film

Furube, Akihiro; Yoshinaga, Taizo; Kanehara, Masayuki; Eguchi, Miharu; Teranishi, Toshiharu

doi:10.1002/anie.201107450

Cited by 32 publications

(26 citation statements)

References 16 publications

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“…[3][4][5] Plasmonic-enhanced optical spectroscopes have been demonstrated with a view to developing new sensing platforms. 6,7 Theoretical approaches have also been utilized in the development plasmonic applications. 8,9 Doped oxide semiconductor NCs are useful plasmonic materials since their LSPR energies can be widely controlled by altering electron densities (n e ) in NCs.…”

mentioning

confidence: 99%

Role of electron carriers on local surface plasmon resonances in doped oxide semiconductor nanocrystals

Matsui

Furuta²,

Tabata

2014

Applied Physics Letters

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Metal nanoantenna plasmon resonance lineshape modification by semiconductor surface native oxide J. Appl. Phys. 112, 044315 (2012); 10.1063/1.4748298 Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal Appl. Phys. Lett. 97, 043105 (2010); 10.1063/1.3467853Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering

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confidence: 99%

Role of electron carriers on local surface plasmon resonances in doped oxide semiconductor nanocrystals

Matsui

Furuta²,

Tabata

2014

Applied Physics Letters

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“…2c). The possibility of non-linear optical phenomena caused by the enhanced electromagnetic field around the ITO NCs 18 , was ruled out by the laser-power dependence of the FCA intensity at 5000 nm (see Supplementary Fig. 9).…”

Section: Resultsmentioning

confidence: 99%

Clear and transparent nanocrystals for infrared-responsive carrier transfer

et al. 2019

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Infrared-light-induced carrier transfer is a key technology for ‘invisible’ optical devices for information communication systems and energy devices. However, clear and colourless photo-induced carrier transfer has not yet been demonstrated in the field of photochemistry, to the best of our knowledge. Here, we resolve this problem by employing short-wavelength-infrared (1400–4000 nm) localized surface plasmon resonance-induced electron injection from indium tin oxide nanocrystals to transparent metal oxides. The time-resolved infrared measurements visualize the dynamics of the carrier in this invisible system. Selective excitation of localized surface plasmon resonances causes hot electron injection with high efficiency (33%) and long-lived charge separation (~ 2–200 μs). We anticipate our study not only provides a breakthrough for plasmonic carrier transfer systems but may also stimulate the invention of state-of-the-art invisible optical devices.

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“…These results agree with the slow hole transfer from quantum dots to surface adsorbates that typically occurs on the 10 s to 100s ps time scale, thus hardly competing with the fast hot-carrier relaxation by electron–phonon scattering (0.6 ps). , Meanwhile, hot electron transfer to RhB is also unlikely because the excitation photon energy (1.55 eV) is insufficient to generate electrons in the Cu 2– x Se conduction band due to its much larger bandgap (2.5 eV, Figure c). Other possibilities, including resonant energy transfer from Cu 2– x Se to RhB or two-photon absorption (TPA) of RhB enhanced by the electromagnetic field on the plasmonic nanocrystal surface are also excluded. These processes should generate excited-state RhB, whose TA spectrum (Figure b and Figure S6) differs significantly from the TA spectra of RhB on Cu 2– x Se NCs; also, a sample of RhB solutions of the same concentration do not show any TPA absorption feature at the same excitation fluence (Figure S7).…”

Section: Results and Discussionmentioning

confidence: 99%

Ultrafast and Long-Lived Transient Heating of Surface Adsorbates on Plasmonic Semiconductor Nanocrystals

et al. 2020

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Plasmonic photocatalysts have demonstrated promising potential for enhancing the selectivity and efficiency of important chemical transformations. However, the relative contributions of nonphotothermal (i.e., hot carrier) and photothermal pathways remain a question of intense current debate, and the time scale and extent of surface adsorbate temperature change are still poorly understood. Using p-type Cu 2−x Se nanocrystals as a semiconductor plasmonic platform and adsorbed Rhodamine B as a surface thermometer and hot carrier acceptor, we measure directly by transient absorption spectroscopy that the adsorbate temperature rises and decays with time constants of 1.4 ± 0.4 and 471 ± 126 ps, respectively, after the excitation of Cu 2−x Se plasmon band at 800 nm. These time constants are similar to those for Cu 2−x Se lattice temperature, suggesting that fast thermal equilibrium between the adsorbates and nanocrystal lattice is the main adsorbate heating pathway. This finding provides insights into the transient heating effect on surface adsorbates and their roles in plasmonic photocatalysis.

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Electric‐Field Enhancement Inducing Near‐Infrared Two‐Photon Absorption in an Indium–Tin Oxide Nanoparticle Film

Cited by 32 publications

References 16 publications

Role of electron carriers on local surface plasmon resonances in doped oxide semiconductor nanocrystals

Role of electron carriers on local surface plasmon resonances in doped oxide semiconductor nanocrystals

Clear and transparent nanocrystals for infrared-responsive carrier transfer

Ultrafast and Long-Lived Transient Heating of Surface Adsorbates on Plasmonic Semiconductor Nanocrystals

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