2019
DOI: 10.1016/j.mattod.2019.01.003
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Electric-field effect on photoluminescence of lead-halide perovskites

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Cited by 22 publications
(21 citation statements)
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“…It is believed that the mismatching strain and the electron doping (as discussed in Figure 3) is the main reason for the PL changing behaviors. [ 40–42 ] Figure 1g and Figure S4, Supporting Information shows differential reflection (Δ R / R ) spectra collected from the Sb 2 O 3 flakes with different thicknesses on 1L MoS 2 crystals grown on a sapphire substrate. Δ R / R is equivalent to the absorption by a constant factor.…”
Section: Resultsmentioning
confidence: 99%
“…It is believed that the mismatching strain and the electron doping (as discussed in Figure 3) is the main reason for the PL changing behaviors. [ 40–42 ] Figure 1g and Figure S4, Supporting Information shows differential reflection (Δ R / R ) spectra collected from the Sb 2 O 3 flakes with different thicknesses on 1L MoS 2 crystals grown on a sapphire substrate. Δ R / R is equivalent to the absorption by a constant factor.…”
Section: Resultsmentioning
confidence: 99%
“…Except that, inspired by the success of applying in Si solar cells, there is another passivation strategy named field-effect passivation (FEP). [24][25][26][27][28] The FEP is to eliminate the interfacial recombination by creating a robust interfacial dipole via inserting a dielectric film which selectively separates photogenerated carriers from the silicon surface. The term "passivation" involves a virtual imbalance between the populations of positive and negative charges near the surface, which prevents minority carrier recombination at the photoabsorber surface and yields a low contact resistance for majority carrier.…”
Section: Introductionmentioning
confidence: 99%
“…The generated electric field, E, was estimated by E = U/d, where d is the combined thickness of the PMMA, the PDMS, the MoS 2 monolayer, and the SiO 2 isolayer. The luminescence of the MoS 2 monolayer is regulated by the gate voltage due to the interaction of excitons with charge carriers via the phase-space filling effect [43,44]. This optoelectronic property can be used to realize electro-optical modulators operating in the visible band.…”
Section: Applications Of Ag-nws/pmma/pdms Films As High-performance Ftesmentioning
confidence: 99%