Electric field effect on carrier escape from InAs/GaAs quantum dots solar cells

Dai, Yushuai; Polly, Stephen J.; Hellstroem, Staffan; Forbes, David V.; Hubbard, Seth M.

doi:10.1109/pvsc.2014.6925685

Cited by 3 publications

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Considering Eq. (11) and the investigation of the n and k coefficients in AlGaInP semiconductor from reference [28], it can be concluded that by inserting an AlGaInP semiconductor as EBL and HBL, the photogeneration rate will increase. Fig.…”

Section: Photogeneration Ratementioning

confidence: 99%

See 1 more Smart Citation

Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

Abbasian

Sabbaghi‐Nadooshan

2020

FACTA U EE

View full text Add to dashboard Cite

In this work, a GaAs-based quantum well solar cell with a 25-layer InAs/GaAs intermediate layer is simulated in Silvaco Atlas TCAD software. In order to reduce the recombination caused by the presence of the quantum layers and increase the absorption of photons, electron blocking layers (EBLs) and hole blocking layers (HBLs) have been added to the solar cell in an In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor. The results show that the efficiency of the proposed solar cell increases 17.38% by obtaining impurity the thickness and doping of the EBL and HBL layers. It can be concluded that the use of the In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor with EBL and HBL layers decreases the open circuit voltage (V oc) caused in the quantum wells. The efficiency of the proposed solar cell with EBL and HBL layers was found to be 44.65%.

show abstract

Section: Photogeneration Ratementioning

confidence: 99%

“…In 2013, Xiaoguang et al achieved 17% efficiency by investigating the effects of Si-doping on InAs/GaAs quantum dots [10]. The effect of electric field on different layers of InAs/GaAs quantum dots was investigated by Yushuai et al in 2014 [11]. In 2015, Inigo et al designed the InAs/InGaP Quantum-Dot cell [12].…”

Section: Introductionmentioning

confidence: 99%