Electric Field Distriutions in Dielectrics, with Special Emphasis on Near-Surface Regions in Ferroelectrics

Bloomfield, Philip E.; Lefkowitz, I.; Aronoff, A. D.

doi:10.1103/physrevb.4.974

Cited by 49 publications

(4 citation statements)

References 22 publications

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“…Similarly, a strained piezoelectric material can also produce a permanent polarization that induces a remnant piezopotential at the piezoelectric material‐electrode interface under a short‐circuit condition. This phenomenon can be understood via the same model used for ferroelectric materials 20, 25, 26…”

Section: Remnant Polarization In Strained Piezoelectric Materialsmentioning

confidence: 98%

Band Structure Engineering at Heterojunction Interfaces via the Piezotronic Effect

2012

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Engineering the electronic band structure using the piezopotential is an important aspect of piezotronics, which describes the coupling between the piezoelectric property and semiconducting behavior and functionalities. The time-independent band structure change under short-circuit condition is believed to be due to the remnant piezopotential present at the interface, a result of the finite charge-screening depth at the interface. A series of materials, including metals, semiconductors and electrolytes, are selected to investigate the interfacial band structure engineered by remnant piezopotential when they are in contact with a strained piezoelectric semiconductor. The remnant piezopotential at the interface can switch the junction between Ohmic and Schottky characters, enhance charge combination/separation, regulate barrier height, and modulate reaction kinetics. The difference between the regular time-dependent, pulse-type piezopotential and constant remnant piezopotential is also discussed in detail using a ZnO-based photoelectrochemical anode as an example. The piezotronic effect offers a new pathway for engineering the interface band structure without altering the interface structure or chemical composition, which is promising for improving the performance of many electronics, optoelectronics, and photovoltaic devices.

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Section: Remnant Polarization In Strained Piezoelectric Materialsmentioning

confidence: 98%

Band Structure Engineering at Heterojunction Interfaces via the Piezotronic Effect

2012

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“…These assumptions imply a strong enhancement of the dielectric function below the frequency, corresponding to the typical inverse response time of the space-charge layer, say 0.1 Hz. differential equations (1) to (3) seem to exist except3 for p o = 0. Since specific numerical problems arise No analytical or numerical solutions to the set of centre, because the roundoff errors get too large.…”

Section: Computer Simulationmentioning

confidence: 96%

“…* In either case, the dynamics of space charge' is governed by equilibrium between diffusion and drift at temperature T, Poisson's equation for the derivative of the polarization P with respect to the thickness coordinate z of a thin plate, reads for certain ranges of p~ and E , the procedure for solving (1) to (3) is outlined.…”

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confidence: 99%

Polarization distribution and space charge in the surface region of Ferroelectrics

Hoechli

Mueller

1976

Ferroelectrics

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“…Les distributions de porteurs, de champ et de potentiel ont été déterminées par des méthodes analytiques [7][8][9][10][11][12][13] ou numériques [14][15][16][17][18][19]. La plupart de ces travaux, soit en raison de certaines approximations, soit en raison d'une spécificité d'application n'ont pas permis de dégager des expressions analytiques des densités de porteurs et du champ électrique dans le cas général.…”

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Etats stationnaires et régimes évolutifs de la charge d'espace dans les diélectriques. Influence de la nature de l'interface sur les distributions de charges et de potentiel

Bardet¹

1979

J. Phys. France

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L'utilisation d'une méthode numérique décrite dans un article antérieur a permis d'obtenir les distributions de charge électrique et de potentiel dans un diélectrique unidimensionnel à un porteur. Les résultats obtenus avec des interfaces injectantes symétriques ou non et des interfaces bloquantes ont été comparés. Des expressions analytiques des différentes variables électriques sont données ainsi que leur domaine de validité. De l'étude théorique il a été possible de déduire des techniques expérimentales simples permettant de déterminer la charge q et la mobilité μ des porteurs, ainsi que la concentration de porteurs aux interfaces et la charge totale du matériau

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Electric Field Distriutions in Dielectrics, with Special Emphasis on Near-Surface Regions in Ferroelectrics

Cited by 49 publications

References 22 publications

Band Structure Engineering at Heterojunction Interfaces via the Piezotronic Effect

Band Structure Engineering at Heterojunction Interfaces via the Piezotronic Effect

Polarization distribution and space charge in the surface region of Ferroelectrics

Etats stationnaires et régimes évolutifs de la charge d'espace dans les diélectriques. Influence de la nature de l'interface sur les distributions de charges et de potentiel

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