“…This effect has been observed for different chalogenic glasses [l], amorphous Si,N, [2], SiO,[3], GeSe [a], ZnSe [5], V,O, [6], Ta,O, [7]. The performed investigation is indicative of a broad energy distribution of localized states in the band gap of these compounds with typical depth E = 0.2 to 1.0 eV and concentration N , = lo1' to 1019 (3111-3. Most theoretical models (see [8] and references therein) describing the field dependence of the amorphous semiconductors are based on the Poole-Frenkel effect for Coulomb or screened Coulomb potential of the trap.…”