Electric field control on gated Pt/Co/SiO<sub>2</sub> heterostructure with insulating polymer

Tan, Funan; Lim, Gerard Joseph; Law, Wai Cheung; Luo, Feilong; Liu, H X; Poh, F.; Shum, D.; Lew, Wen Siang

doi:10.1088/1361-6463/aad541

Cited by 9 publications

(3 citation statements)

References 27 publications

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“…These results were more than an order of magnitude larger than those reported in Pt/Co/oxide systems at room temperature when an electric field of up to 0.38 V/nm was applied 13 , 20 , 21 , 27 . A H c change larger than 10 mT by voltage applications has been reported for Pt/Co/oxide systems when measured at low temperatures 28 , 30 , or when the apparent magneto-ionic (redox) effect was observed 14 , 39 , 40 . In the latter case, a non-volatile H c change with a very slow time scale (more than several minutes) has been observed on applying bias-voltage.…”

Section: Resultsmentioning

confidence: 86%

Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect

Nozaki

Tamaru

Konoto

et al. 2021

Sci Rep

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There is urgent need for spintronics materials exhibiting a large voltage modulation effect to fulfill the great demand for high-speed, low-power-consumption information processing systems. Fcc-Co (111)-based systems are a promising option for research on the voltage effect, on account of their large perpendicular magnetic anisotropy (PMA) and high degree of freedom in structure. Aiming to observe a large voltage effect in a fcc-Co (111)-based system at room temperature, we investigated the voltage-induced coercivity (Hc) change of perpendicularly magnetized Pt/heavy metal/Co/CoO/amorphous TiOx structures. The thin CoO layer in the structure was the result of the surface oxidation of Co. We observed a large voltage-induced Hc change of 20.2 mT by applying 2 V (0.32 V/nm) to a sample without heavy metal insertion, and an Hc change of 15.4 mT by applying 1.8 V (0.29 V/nm) to an Ir-inserted sample. The relative thick Co thickness, Co surface oxidation, and large dielectric constant of TiOx layer could be related to the large voltage-induced Hc change. Furthermore, we demonstrated the separate adjustment of Hc and a voltage-induced Hc change by utilizing both upper and lower interfaces of Co.

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Section: Resultsmentioning

confidence: 86%

Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect

Nozaki

Tamaru

Konoto

et al. 2021

Sci Rep

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“…13,20,21,27 A H c change larger than 10 mT by voltage applications has been reported for Pt/Co/oxide systems when measured at low temperatures, 27,29 or when the apparent magneto-ionic (redox) effect was observed. 13,36 In the latter case, a non-volatile H c change with a very slow time scale (more than several minutes) has been observed on applying bias-voltage. The H c change in this study was faster than the MOKE measurement time (<1 minute), and the possibility of the magnetoionic effect was low.…”

Section: Resultsmentioning

confidence: 91%

Large Voltage-Induced Coercivity Change in Pt/Co/CoO/Amorphous TiOx Structure and Heavy Metal Insertion Effect

Nozaki

Tamaru

Konoto

et al. 2021

Preprint

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There is urgent need for spintronics materials exhibiting a large voltage modulation effect to fulfill the great demand for high-speed, low-power-consumption information processing systems. Fcc-Co (111)-based systems are a promising option for research on the voltage effect, on account of their large perpendicular magnetic anisotropy (PMA) and high degree of freedom in structure. Aiming to observe a large voltage effect in a fcc-Co (111)-based system at room temperature, we investigated the voltage-induced coercivity (Hc) change of a perpendicularly magnetized Pt/heavy metal/Co/CoO/amorphous TiOx structure. The thin CoO layer in the structure was the result of the surface oxidation of Co. We observed a large voltage-induced Hc change of 20.2 mT by applying 2 V (0.32 V/nm) to a sample without heavy metal insertion, and an Hc change of 15.4 mT by applying 1.8 V (0.29 V/nm) to an Ir-inserted sample. The relative thick Co thickness, Co surface oxidation, and large dielectric constant of TiOx layer could be related to the large voltage-induced Hc change. Furthermore, we demonstrated the separate adjustment of Hc and a voltage-induced Hc change by utilizing both upper and lower interfaces of Co.

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“…Another potential method to control the spin current, the SOT, and the magnetization dynamics is voltage control in the STFMR device. Voltage control is commonly applied to manipulate the magnetic anisotropy in order to facilitate the switching of the magnetization or domain wall motion [307][308][309][310][311][312][313][314][315] via the magneto-ionic effect, i.e., the physical diffusion of oxygen ions in the magnetic material [316,317]. Here I propose to use the oxygen migration to manipulate the properties of the NM.…”

Section: Future Perspectivesmentioning

confidence: 99%

Investigations of spin currents in elemental, alloyed and multilayer systems using spin-torque ferromagnetic resonance technique

Coester

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Current-induced spin-orbit torques (SOT) are a vital research field within the realm of spintronics. They have attracted significant attention due to the vast opportunities for applications, e.g., in neuromorphic computing or memory devices, and their potential to reduce energy consumption in said applications. Energy efficient generation of SOT is an enormous "[…] after all you put me through, You'd think I'd despise you, But in the end, I wanna thank you, 'Cause you made me that much stronger" [1]. These words from Christina Aguilera's song "Fighter" summarize nicely how this Ph.D. journey has felt. It has been an arduous journey with many ups and downs, but it was a challenge that was always meant to be conquered and grow from. However, it also was never supposed to be a solo trip, and luckily, I didn't have to do this all on my own but with the support of great people from all over the world: Firstly, I thank Prof Lew Wen Siang for giving me the opportunity to conduct my research under your supervision. I also thank you for your support and advice throughout my Ph.D. journey.Next, I thank all group members, past and present, for support of all kinds and an enjoyable work environment. In particular, I like to give some shoutouts to the following people: Gerard, thank you for your help with every detail in the lab and beyond. Thank you for ensuring that everything runs smoothly. Weiliang, thank you for building the first laser litho in our lab, significantly shortening my sample fabrication time. Also, for your help with my first paper, general support, and enlightening discussions. Grayson, for your introduction to ST-FMR measurement techniques and analysis and EBL and other equipment in the lab. Xu Zhan, or as you were introduced to me: "Bob", for your help with my first project and for sharing your knowledge about spintronics and ST-FMR. Wai Cheung, thank you for your help with ST-FMR measurements, even after you left NTU, and for helping me even, when I wasn't aware of it. Calvin Ang, thank you for introducing sputtering and answering my random questions.Jia Min, for proofreading my emails, printing my documents, and sharing your love for breaks and your emotional support. And speaking of emotional support, Lingli and Andhita, thank you both for your friendship, the more or less spontaneous hiking trips, and most importantly, lunch and dinner chats. Andhita, thanks for partly sharing my enthusiasm for running and podcasts and your consistently good mood. Tianli, thank you for being a great desk neighbor; those late nights would have been very lonely without you. And thank you for answering my questions whenever they come up. Funan, thank you for your help with my research, even when it was not your expertise, and for your help with whatever came up. And please say thank you to your mom for preparing the fruit box, which you generously shared with your teammates. Han Yin,

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Electric field control on gated Pt/Co/SiO₂ heterostructure with insulating polymer

Cited by 9 publications

References 27 publications

Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect

Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect

Large Voltage-Induced Coercivity Change in Pt/Co/CoO/Amorphous TiOx Structure and Heavy Metal Insertion Effect

Investigations of spin currents in elemental, alloyed and multilayer systems using spin-torque ferromagnetic resonance technique

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Electric field control on gated Pt/Co/SiO2 heterostructure with insulating polymer

Cited by 9 publications

References 27 publications

Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect

Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect

Large Voltage-Induced Coercivity Change in Pt/Co/CoO/Amorphous TiOx Structure and Heavy Metal Insertion Effect

Investigations of spin currents in elemental, alloyed and multilayer systems using spin-torque ferromagnetic resonance technique

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Electric field control on gated Pt/Co/SiO₂ heterostructure with insulating polymer