Electric control of magnetization via control of carriers' spectrum anisotropy

Чернышов, А. В.; Overby, M.; Rokhinson, Leonid P.; Lyanda-Geller, Yuli; Liu, X.; Furdyna, J. K.

doi:10.1109/drc.2009.5354908

Cited by 2 publications

(2 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ferromagnets retain magnetic polarization, which is switchable with an external magnetic field, allowing non-volatile tunability. 13,14 Yet, magnetic controllability is more cumbersome than the semiconducting transistor electric-field tunability, especially for miniaturized devices.…”

mentioning

confidence: 99%

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

Suleiman

Sarott

Trassin

et al. 2021

Applied Physics Letters

View full text Add to dashboard Cite

Superconductivity serves as a unique solid-state platform for electron interference at a devicerelevant lengthscale, which is essential for quantum information and sensing technologies. As opposed to semiconducting transistors that are operated by voltage biasing at the nanometer scale, superconductive quantum devices cannot sustain voltage and are operated with magnetic fields, which impose a large device footprint, hindering miniaturization and scalability. Here we introduce a system of superconducting materials and devices that have a common interface with a ferroelectric layer. An amorphous superconductor was chosen for reducing substrate-induced misfit strain and for allowing low-temperature growth. The common quantum pseudowavefunction of the superconducting electrons was controlled by the non-volatile switchable polarization of the ferroelectric by means of voltage biasing. A controllable change of 21% in the critical temperature was demonstrated for a continuous film geometry. Moreover, a controllable change of 54% in the switching current of a superconducting quantum interference device (SQUID) was demonstrated. The ability to voltage bias superconducting devices together with the non-volatile nature of this system paves the way to quantum-based memory devices.

show abstract

mentioning

confidence: 99%

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

Suleiman

Sarott

Trassin

et al. 2021

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…It provides the evidence for magnetization reversal in a dilute magnetic material by means of spin-orbit induced magnetic field contributed by the broken symmetry of the film structure. On the other hand, the first observation of a current-induced SOT in a ferromagnetic heterostructure consisting of a metallic thin Co layer sandwiched by Pt and AlOx interfaces is reported by Miron et al[46], which results from the broken symmetry of the interfaces. In the Pt/Co/ AlOx heterostructures, Rashba and spin Hall effect induce the effective fields at the interface between the heavy metal and the ferromagnetic layer, to give rise to a torque on the local magnetization of thin Co layer resulting in the domain wall nucleation[46,49].Alternatively, a new case of an ultrathin Co layer sandwiched between two different heavy metals, Pt and Ta, which have spin Hall angles of opposite sign, is reported [53].…”

mentioning

confidence: 99%

Spin-orbit torque (SOT) effective fields and SOT-induced switching in perpendicularly magnetized multilayers

Li¹

View full text Add to dashboard Cite

Spin-orbit torque (SOT) is an electrical-driven phenomenon in which the magnetization of a ferromagnetic material can be switched by the momentum transfer of the diffused accumulated spins at the heavy metal (HM)/ferromagnet (FM) interface, when applying an electric current through the HM layer. The SOT effect is highly attractive from application viewpoint, specifically for faster magnetization switching

show abstract

Electric control of magnetization via control of carriers' spectrum anisotropy

Cited by 2 publications

References 5 publications

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

Spin-orbit torque (SOT) effective fields and SOT-induced switching in perpendicularly magnetized multilayers

Contact Info

Product

Resources

About