2014
DOI: 10.1038/ncomms4404
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Electric control of magnetism at the Fe/BaTiO3 interface

Abstract: Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO3 system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO3 dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial magnet… Show more

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Cited by 190 publications
(162 citation statements)
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“…Similarly, magnetoelectric coupling can emerge at the interfaces. [375][376][377] Finally, in the last several years progressively more attention has been paid to the coupling between physical and electrochemical phenomena in oxides, especially pronounced in nanoscale systems 278,279,[378][379][380][381] Similarly to the magnetoelectricity and electronic transport, the coupling between ferroelectric functionality and (electro)chemistry can be bulk and interface driven. In the bulk, Morozovska 382 analyzed the case of Vegard strain changing the sign of the first term in the Landau expansion, resulting in a ferroelectric phase transition.…”
Section: Phenomenamentioning
confidence: 99%
“…Similarly, magnetoelectric coupling can emerge at the interfaces. [375][376][377] Finally, in the last several years progressively more attention has been paid to the coupling between physical and electrochemical phenomena in oxides, especially pronounced in nanoscale systems 278,279,[378][379][380][381] Similarly to the magnetoelectricity and electronic transport, the coupling between ferroelectric functionality and (electro)chemistry can be bulk and interface driven. In the bulk, Morozovska 382 analyzed the case of Vegard strain changing the sign of the first term in the Landau expansion, resulting in a ferroelectric phase transition.…”
Section: Phenomenamentioning
confidence: 99%
“…7 Recently, electric field effects on magnetic properties were demonstrated in all-solid-state devices, exploiting mechanisms such as interfacial hybridization induced by a change in electronic d orbital population, magneto-electric coupling in multiferroics and accumulation of charges induced by ferroelectric polarization in artificial multiferroics. [8][9][10][11][12][13] On a parallel line, ion migration has been widely exploited in non-magnetic devices, e.g., made by an oxide layer sandwiched by two metallic layers, suitable for resistive switching technology. 14,15 The magneto-ionic effect, i.e., the electric control of magnetic properties mediated by ion migration, 16,17 is a physical phenomenon connecting these two fields.…”
mentioning
confidence: 99%
“…To overcome this limitation, the use of artificial 35 heterostructures combining ferromagnetic films with ferro-or 36 piezo-electric substrates has been explored [8][9][10][11][12].…”
mentioning
confidence: 99%