Elastic constants, debye temperatures, and electron-phonon parameters of superconducting cuprates and related oxides

Ledbetter, Hassel; Lei, Ming; Kim, Sudook

doi:10.1080/01411599008241819

Cited by 77 publications

(38 citation statements)

References 21 publications

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“…Poisson's ratio for strontium titanate is ν = 0.232 [13]. During each indentation, five loading-unloading cycles with increasing loads were performed to obtain values for different indentation depths between 100 nm and 180 nm measured from top of the electrode (see Fig.…”

Section: Methodsmentioning

confidence: 99%

Electric field mediated switching of mechanical properties of strontium titanate at room temperature

Stöcker¹,

Zschornak

Leisegang

et al. 2009

Cryst. Res. Technol.

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In situ application of an electric field to a SrTiO 3 single crystal plate during nanoindentation led to a reversible change of the mechanical properties at room temperature. When a field of 8 kV/cm was applied, Meyer hardness and Young's modulus decreased by 0.6 GPa and 11 GPa, respectively. An explanation for this behaviour is given by the diffusion of oxygen vacancies resulting in a distortion of the perovskite-type of structure in the near-surface layer tested by nanoindentation. Simulations using density functional theory support the dependence of elasticity on the presence of vacancies. Thus, we can show the remarkable influence of electric fields on oxide materials which should be considered and used in designing future applications.

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Section: Methodsmentioning

confidence: 99%

Electric field mediated switching of mechanical properties of strontium titanate at room temperature

Stöcker¹,

Zschornak

Leisegang

et al. 2009

Cryst. Res. Technol.

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“…A fully-strained stoichiometric STO film on Ge should have an out-of-plane lattice constant of 3.852 Å at room temperature based on a Possion ratio for STO of 0.232. [31] The experimental STO value [Square (a) in Fig. 2(b)] is 3.883 Å due to Sr-enrichment.…”

Section: Functional Oxides Research Lettermentioning

confidence: 99%

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

McDaniel

Posadas

et al. 2016

MRS Communications

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This work reports the growth of crystalline SrHf x Ti 1−x O 3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225°C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ∼530°C (x = 0) to ∼660°C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm 2 leakage current at 1 MV/cm for x = 0.55.

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“…First, the intrinsic relaxed (cubic) lattice parameter of the SrTiO 3 [17]. The Poisson's ratios for thin films of SrTiO 3 and BaZrO 3 are not known, however, the in-plane strain, ε xx = (a -â)/â, and the out-ofplane (or normal) strain, ε zz = (c -â)/â, can be calculated for different values of ν and are found to be in the range of a fraction of a percent, as shown in Table I.…”

mentioning

confidence: 99%

Ferroelectric and antiferroelectric coupling in superlattices of paraelectric perovskites at room temperature

et al. 2003

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Results from dielectric and structural measurements on epitaxial SrTiO 3 /BaZrO 3 superlattices reveal properties that cannot be explained simply in terms of those measured on single films of the constituent materials. The periodic stacking of epitaxial perovskite films, and thus the formation of artificial superlattice structures, allows us to intimately couple dissimilar materials and to observe emerging physical properties that are not necessarily a simple combination of those found in the constituent materials. Motivated both by the technological interest in ferroelectrics for device applications and the quite good understanding of these materials' intriguing properties, structures consisting of paraelectric and ferroelectric layers have received considerable attention. Here we report on the observation of ferroelectric and antiferroelectric properties in structures consisting entirely of paraelectric constituents, and show that the data are compatible with an interpretation of strain-induced ferroelectricity at room temperature and spacing-dependent coupling between such layer.

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Elastic constants, debye temperatures, and electron-phonon parameters of superconducting cuprates and related oxides

Cited by 77 publications

References 21 publications

Electric field mediated switching of mechanical properties of strontium titanate at room temperature

Electric field mediated switching of mechanical properties of strontium titanate at room temperature

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

Ferroelectric and antiferroelectric coupling in superlattices of paraelectric perovskites at room temperature

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