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The precise quantification of the pyroelectric coefficient p is indispensable for the characterization of pyroelectric materials and the development of pyroelectric-based devices, such as radiation sensors or energy harvesters. A summary of the variety of techniques to measure p is given in the present review. It provides a classification after the thermal excitation and an outline of capabilities and drawbacks of the individual techniques. The main selection criteria are: the possibility to separate different contributions to the pyroelectric coefficient, to exclude thermally stimulated currents, the capability to measure p locally, and the requirement for metallic electrodes. This overview should enable the reader to choose the technique best suited for specific samples.

Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size.

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