Elastic and inelastic energy deposition distributions during ion implantation in solids

Burenkov, A. F.; Komarov, F. F.; Temkin, M. M.

doi:10.1080/00337578308217821

Cited by 9 publications

(9 citation statements)

References 12 publications

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“…At the determined volume content x of the metallic phase a number of atoms in a unit volume is about N M = 8.5 × 10 22 cm −3 [8]. In this case a number of atoms per nanoparticle is equal to N M x.…”

Section: Resultsmentioning

confidence: 91%

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The Features of Real Part of Admittance in the Nanocomposites (Fe₄₅Co₄₅Zr₁₀)_x(Al₂O₃)_{100 - x}Manufactured by the Ion-Beam Sputtering Technique with Ar Ions

et al. 2011

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The temperature and frequency dependences of the admittance real part σ(T, f ) in granular (Fe 45 Co 45 Zr 10 ) x (Al 2 O 3 ) 100−x nanocomposite films around the percolation threshold x C were investigated. The behaviour of σ(T, f ) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold x C and of a metallic one beyond the x C determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.

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Section: Resultsmentioning

confidence: 91%

“…A number of Al 2 O 3 molecules falling at N M x metallic atoms equals N M (1 − x). In as much as the number of Al 2 O 3 molecules in a unit volume is N D = 2.34 × 10 22 cm −3 [8], the volume of the dielectric phase is found from…”

Section: Resultsmentioning

confidence: 99%

The Features of Real Part of Admittance in the Nanocomposites (Fe₄₅Co₄₅Zr₁₀)_x(Al₂O₃)_{100 - x}Manufactured by the Ion-Beam Sputtering Technique with Ar Ions

et al. 2011

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“…The structure of expressions (3)(4)(5) follows from the straightforward probabilistic considerations. The statistical weight of a transition history having n transitions at depths x k , k = 0, · · · , n − 1, is constructed from the probabilities dx k /R k of successful transitions at [x k , x k + dx k ], and those of an ion to keep the specific mode of motion at depth intervals…”

Section: General Modelmentioning

confidence: 99%

“…Then it is resolved by numerical solution of the Boltzmann type kinetic equation of ion transport using the method of moments. In the most topical cases, doping profiles in an amorphous solid can be acceptably characterized by first four moments [5]. So, one can parameterize the numerically calculated profiles by analytical distribution functions of Pearson type IV [6,7] well studied in mathematical statistics.…”

Section: Introductionmentioning

confidence: 99%

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

Bratchenko¹,

Dyuldya²,

Bakai³

2009

Condens. Matter Phys.

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New phenomenological models are proposed to describe the effect of an ordered lattice structure of crystalline targets on the as-implanted doping profiles of low-energy heavy ions. The models account for the channeling kinetics and clarify the effect of bi-directional transitions of ions between random-like and channeled modes of motion on the target depth dependencies of dopant concentration. They also incorporate a simple model of the target radiation damaging effect on doping profiles. The presented results of model validation against the experimental and Monte Carlo computer simulation data and the comparative analysis of the capabilities of the proposed and the existing models show that the application of a more physically grounded approach allows us to improve the quality of doping profile description. The theoretical models developed are useful for obtaining physical parameters of low-energy ion channeling kinetics from the experimental data.

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“…This method make possible the calculation of the spatial moments over mentioned above distributions vs. primary ion energy. Unlike the other similar models, based on the LBTE theory (such as Winterbon, Gibbons or Komarov methods [3][4][5][6][7]9,10]) the presented method allows us to extend this approach directly for including the case of homogeneous compound target without the losses of calculation accuracy.…”

Section: Introductionmentioning

confidence: 99%

Transport equations calculation of energy deposition distribution in atomic collisions cascade

Журкин¹,

Ivanov²

1999

SPIE Proceedings

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The new software package RANGE for the calculation ofthe statistical parameters of range and deposited energy depth distributions in atomic collisions cascade caused in multicomponent media by ion bombardment is presented. Possible primary energies covers the range from 100 eV to 1000 MeV/a.m.u.. This code is based on the specially developed new numerical method of solving of the Linear Boltzmann Transport Equation. Unlike others similar approaches the presented method permit us to extend this approach to include directly the case of homogeneous compound targets without of the losses of calculation accuracy. It is possible to take into consideration any ion-target combination both for mono-and polyatomic homogeneous targets (such as gases, metals, semiconductors, chemical compounds, and many others) containing up to 10 of different kinds of the atoms. Also RANGE code make possible the selection of the models of elastic cross-section and electronic stopping power (including ZBL ones which being used in very known TRIM code). Testing of RANGE code have shown a good quantitative agreement of the calculation data on the ranges and damages depth profiles both with the many experimental ones and with the corresponding calculations in the frame of Monte-Carlo technique at same selection of the stopping and scattering models.

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Elastic and inelastic energy deposition distributions during ion implantation in solids

Cited by 9 publications

References 12 publications

The Features of Real Part of Admittance in the Nanocomposites (Fe₄₅Co₄₅Zr₁₀)_x(Al₂O₃)_{100 - x}Manufactured by the Ion-Beam Sputtering Technique with Ar Ions

The Features of Real Part of Admittance in the Nanocomposites (Fe₄₅Co₄₅Zr₁₀)_x(Al₂O₃)_{100 - x}Manufactured by the Ion-Beam Sputtering Technique with Ar Ions

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

Transport equations calculation of energy deposition distribution in atomic collisions cascade

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Elastic and inelastic energy deposition distributions during ion implantation in solids

Cited by 9 publications

References 12 publications

The Features of Real Part of Admittance in the Nanocomposites (Fe45Co45Zr10)x(Al2O3)100 - xManufactured by the Ion-Beam Sputtering Technique with Ar Ions

The Features of Real Part of Admittance in the Nanocomposites (Fe45Co45Zr10)x(Al2O3)100 - xManufactured by the Ion-Beam Sputtering Technique with Ar Ions

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

Transport equations calculation of energy deposition distribution in atomic collisions cascade

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Product

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The Features of Real Part of Admittance in the Nanocomposites (Fe₄₅Co₄₅Zr₁₀)_x(Al₂O₃)_{100 - x}Manufactured by the Ion-Beam Sputtering Technique with Ar Ions

The Features of Real Part of Admittance in the Nanocomposites (Fe₄₅Co₄₅Zr₁₀)_x(Al₂O₃)_{100 - x}Manufactured by the Ion-Beam Sputtering Technique with Ar Ions