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McNally, Patrick J.; Curley, J.; Bolt, M.; Reader, A. H.; Tuomi, T.; ̈ki, R. Rantama; Danilewsky, A.N.; DeWolf, Ingrid

doi:10.1023/a:1008993322697

Cited by 13 publications

(9 citation statements)

References 12 publications

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“…The measurements were performed at the HASYLAB am DESY Synchrotron, Hamburg, Germany as described elsewhere [5,6] and at the ANKA Synchrotron, ISS, Karlsruhe, Germany. In section topography, which was used in this study, the beam was limited by a horizontal slit having a width of 15 µm, and the (001) silicon wafer surface was at an angle of 20°with respect to the incident beam.…”

Section: Methodsmentioning

confidence: 99%

“…The wafers are (100) oriented p-type Si wafers, with a resistivity of 8-15 Ohm-cm. They were subjected to a 1160°C anneal in a N 2 ambient in order to simulate typical thermal annealing conditions in an IC process, which has been described previously [5]. When the Si wafer is subjected to thermal cycling during production, the presence of oxygen impurities in the wafer results in the nucleation of large oxygen-related precipitates.…”

Section: Methodsmentioning

confidence: 99%

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The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography

Murphy

Whelan

McNally

et al. 2004

Eur. Phys. J. Appl. Phys.

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Abstract.Crystal distortions modify the propagation of X-rays in single crystal materials, and X-ray topography can be used to record these modifications on a film thus providing images of the distributions and nature of defects, dislocations, strains, precipitates, etc. in semiconductors. Small variations of contrast, which often need to be analysed can be rendered invisible. Furthermore, artefacts in the films must be removed. This study examines the use of advanced image analysis techniques applied to a selection of X-ray topographs in section transmission mode: (i) the automated counting of oxygen-related precipitates and (ii) the enhancement of Pendellösung fringes. The technique also succeeds in removing unwanted features in the original x-ray topographs such as vertical streaking due to collimating slit phase contrast and strain features near the surface due to the presence of integrated circuit process strains.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography

Murphy

Whelan

McNally

et al. 2004

Eur. Phys. J. Appl. Phys.

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“…Details of the experimental technique can be found in Refs. [12] and [22]. The aforementioned large area Bragg patterns of topographs were recorded on Geola VRP-M film having an emulsion grain size of about 0.05 mm.…”

Section: Methodsmentioning

confidence: 99%

“…However the SXRT technique is a fast and non-destructive method which also facilitates large area inspection with respect to TEM. In addition, when used in LA-BRT mode, one can provide depth information for defect distributions inside the sample by examining different reflections, as the penetration depths for different reflections differ from each other [12,13]. It can provide depth information from several nanometres to several hundred micrometres from the sample surface [12,13].…”

Section: Introductionmentioning

confidence: 99%

Quality Assessment of Sapphire Wafers for X-Ray Crystal Optics Using White Beam Synchrotron X-Ray Topography

Chen

McNally

Shvyd’ko

et al. 2001

phys. stat. sol. (a)

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The white beam Synchrotron X-Ray Topography (SXRT) technique was used to assess the quality of sapphire wafers grown by the Heat-Exchanger Method (HEM) and the Modified Czochralski Method (MCM). Sapphire is a potential new material for X-ray crystal optics, especially for use as Bragg backscattering mirrors for X-rays and Mö ssbauer radiation. The dislocation distribution, dislocation density and Burgers vector of selected dislocations and stacking faults in the sapphire wafers were studied. A correlation between the sapphire quality and its performance as an X-ray backscattering mirror was established in this paper. The results reveal the high quality of the inspected HEM sapphire wafers and their subsequently improved performance as Bragg backscattering mirrors.

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“…Three-dimensional stress/strain images can be obtained throughout the entire depth of the semiconductor material under investigation. Geometrical resolution is governed by the synchrotron beam divergence and usually lies in the µm range at beamline F-1 at HASYLAB used in this paper [8]. This spatial resolution is given by the relation δ = H D/L, where H is the radiation source dimension, L the source-sample distance, and D the sample-plate distance [7].…”

Section: Introductionmentioning

confidence: 99%

Mapping of mechanical stresses in silicon substrates due to lead tin solder bump reflow process via synchrotron x-ray topography and finite element modelling

Kanatharana

Pérez-Camacho

Buckley

et al. 2003

J. Phys. D: Appl. Phys.

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White beam synchrotron x-ray topography (WBSXRT) is a non-destructive technique, which is capable of analysing the strain and/or dislocation distribution in single crystal materials. This paper discusses the application of WBSXRT to the analysis of strain fields due to the microelectronic packaging of integrated circuits. A ball grid array package containing an Intel® Pentium® III microprocessor was employed to investigate the spatial extent of strain fields imposed on the underlying silicon substrate due to the reflow process for lead–tin solder bumps.Large area and section back-reflection SXRT images were taken before and after the reflow process at 350°C in atmosphere. The effects of strain imposed by the overlying bump structures in these x-ray topographs have been observed principally via orientational contrast. This was also the situation after the reflow process due to severe stresses in the underlying silicon beneath the lead bumps. The estimated magnitudes of shear stress, |τxy|, imposed on the underlying silicon were calculated to be of the order of 100 MPa. A simulation of the orientational contrast at the edge of bump was performed based on the kinematical theory of x-ray diffraction (Rantamäki R et al 1999 J. Appl. Phys. 86 4298). The degree of lattice distortion is well fitted to the topographs of the post-reflow sample. The spatial strain in the underlying silicon was relieved dramatically after the lead bumps were removed from the wafer, which confirms that the solder bump formation is indeed a major source of strain in the underlying Si. Finite element modelling was performed in two-dimensional plane strain mode. The magnitudes and spatial distribution of the stresses after the reflow process are in good agreement with the SXRT results.

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Cited by 13 publications

References 12 publications

The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography

The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography

Quality Assessment of Sapphire Wafers for X-Ray Crystal Optics Using White Beam Synchrotron X-Ray Topography

Mapping of mechanical stresses in silicon substrates due to lead tin solder bump reflow process via synchrotron x-ray topography and finite element modelling

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