Efficient Visible‐Light Emission from Si/CaF<sup>2</sup> (111) Heterostructures Grown by Molecular Beam Epitaxy

Vervoort, Louis; Bassani, F.; Mihalcescu, I.; Vial, Jean-Claude; d’Avitaya, F. Arnaud

doi:10.1002/pssb.2221900119

Cited by 31 publications

(5 citation statements)

References 6 publications

(5 reference statements)

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“…In analogy to porous silicon the variety of possible low-energy interband transitions might lead to visible radiative recombination. The recent observation of room temperature luminescence for this system by Vervoort et al [4] is a strong support for our conclusion.…”

Section: Results For the Caf-si(z Dl)-caf-si(4 Dl)-caf Superlatticesupporting

confidence: 90%

Si/CaF² Superlattices. A Direct Gap Structure Due to Interface State Coupling

Ossicini

Fasolino

Bernardini

1995

Physica Status Solidi (b)

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One promising approach for the development of silicon-based light-emitting devices is the epitaxial growth of Si nanostructures. In this context, the lattice matched system CaF,/Si/CaF, as prototype of a well controlled and ordered Si-based system with known microscopic structure is proposed. For this system, a new mechanism is found leading to a direct band gap based on the coupling of interface states in very thin Si layers.

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Section: Results For the Caf-si(z Dl)-caf-si(4 Dl)-caf Superlatticesupporting

confidence: 90%

Si/CaF² Superlattices. A Direct Gap Structure Due to Interface State Coupling

Ossicini

Fasolino

Bernardini

1995

Physica Status Solidi (b)

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“…In particular, Si/insulator multiple quantum wells or superlattices ͑SL͒, where calcium fluoride (CaF 2 ) or silicon dioxide (SiO 2 ) were used as insulating material, have been studied from both the experimental and the theoretical points of view, with a particular emphasis on their photoluminescence properties. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] In these systems the thickness of the silicon layers lies in the nanometer range. It is interesting to note that most of the experimental work was originally based on the amorphous silicon films; however, well-defined crystalline Si/SiO 2 systems are now available.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of electron transport inSi/SiO2superlattices: Vertical transport enhanced by a parallel field

Rosini¹,

Jacoboni

Ossicini

2002

Phys. Rev. B

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Considerable effort is presently devoted to develop Si quantum structures for microelectronics and nanoelectronics. In particular, well-defined Si/SiO 2 superlattices and quantum wells are under study. We investigate here the transport properties of a Si/SiO 2 superlattice with a multiband one-particle Monte Carlo simulator. The band structure is obtained with an analytical model and the scattering mechanisms introduced in the simulator are confined optical phonons, both polar and nonpolar. Owing to the very flat shapes of the bands along the growth direction, very low drift velocities are obtained for vertical transport. However, the simulation shows that, for oblique fields, the transport properties along the vertical direction are strongly enhanced by the in-plane component of the electric field, consequently higher vertical drift velocities can be easily obtained.

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“…The fabrication of Si/SiO 2 QWs has been an attractive area in process technology of Si-based light-emitting devices in last few decades. Various techniques are developed to synthesize the Si/SiO 2 nanostructured films-molecular beam epitaxy (MBE) [32][33][34][35][36][37], plasma-enhanced chemical vapor deposition (PECVD) [38][39][40][41][42][43][44][45][46][47][48][49], magnetron sputtering [50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65], electrochemical dissolution in electrolytes, ion implantation, and others. In this chapter, we investigate the growth of amorphous Si/SiO 2 QWs employing an ultrahigh vacuum (UHV) radio frequency (RF) magnetron sputtering (MS) system.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Si/SiO2 Quantum Wells

Takeuchi¹,

Horíkoshi²

2019

Nanostructures in Energy Generation, Transmission and Storage

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The motivation for developing light-emitting devices on an indirect transition semiconductor such as silicon has been widely discussed for Si/SiO 2 nanostructures. In this chapter, we report on the fabrication of Si/SiO 2 quantum-confined amorphous nanostructured films and their optical properties. The Si/SiO 2 nanostructures comprising amorphous Si, SiO 2 , and Si/SiO 2 multilayers are grown using ultrahigh vacuum radio frequency magnetron sputtering. Optical absorption coefficients of the Si/SiO 2 nanostructures are evaluated with regard to tentative integrated Si thicknesses. Optical energy band gaps of the Si/SiO 2 multilayer films are in accordance with the effective mass theory and described as E 0 = 1.61 + 0.75d −2 eV at the Si layer-integrated thicknesses ranging from 0.5 to 6 nm. Quantum confinement effects in the Si/SiO 2 nanostructures are inferred from optical transmittance and reflectance spectra. The rapid-thermal-annealed Si/SiO 2 multilayer films demonstrate the intensified photoluminescence at ~1.45 eV due to the formation of nanocrystalline silicon. The temperature dependence of the nanocrystalline luminescence intensity shows the nonmonotonous behavior which is interpreted invoking the Kapoor model.

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Efficient Visible‐Light Emission from Si/CaF² (111) Heterostructures Grown by Molecular Beam Epitaxy

Abstract: International audienc

Cited by 31 publications

References 6 publications

Si/CaF² Superlattices. A Direct Gap Structure Due to Interface State Coupling

Si/CaF² Superlattices. A Direct Gap Structure Due to Interface State Coupling

Monte Carlo simulation of electron transport inSi/SiO2superlattices: Vertical transport enhanced by a parallel field

Nanostructured Si/SiO2 Quantum Wells

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Efficient Visible‐Light Emission from Si/CaF2 (111) Heterostructures Grown by Molecular Beam Epitaxy

Abstract: International audienc

Cited by 31 publications

References 6 publications

Si/CaF2 Superlattices. A Direct Gap Structure Due to Interface State Coupling

Si/CaF2 Superlattices. A Direct Gap Structure Due to Interface State Coupling

Monte Carlo simulation of electron transport inSi/SiO2superlattices: Vertical transport enhanced by a parallel field

Nanostructured Si/SiO2 Quantum Wells

Contact Info

Product

Resources

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Efficient Visible‐Light Emission from Si/CaF² (111) Heterostructures Grown by Molecular Beam Epitaxy

Si/CaF² Superlattices. A Direct Gap Structure Due to Interface State Coupling

Si/CaF² Superlattices. A Direct Gap Structure Due to Interface State Coupling