Efficient UV photodetectors based on Ni-doped ZnS nanoparticles prepared by facial chemical reduction method

Kumar, Vipin; Rawal, Ishpal; Kumar, Vinod; Goyal, P. K.

doi:10.1016/j.physb.2019.411690

Cited by 41 publications

(25 citation statements)

References 57 publications

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“…The maximum responsivity of this photodetector device is calculated to be 0.31 (A/W). It is worth noting that, the peak photocurrent of our best device (constructed using ZnS quantum dot solid 24 hrs sample) is much higher compared to the recently reported values 63,64 . Figure 13(a) shows the I-V characteristic curve under Dark and light illumination conditions.…”

Section: Resultscontrasting

confidence: 57%

Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent

Premkumar

Nataraj

Bharathi

et al. 2019

Sci Rep

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Detection of visible blind UV radiation is not only interesting but also of technologically important. Herein, we demonstrate the efficient detection of UV radiation by using cluster like ZnS quantum dot solid nanostructures prepared by simple reflux condensation technique. The short-chain ligand 3-mercaptopropionic acid (MPA) involved in the synthesis lead to the cluster like formation of ZnS quantum dots into solids upon prolonged synthesis conditions. The ZnS QD solid formation resulted in the strong delocalization of electronic wave function between the neighboring quantum dots. It increases the photocurrent value, which can be further confirmed by the decrease in the average lifetime values from 64 to 4.6 ns upon ZnS cluster like QD solid formation from ZnS QDs. The ZnS quantum dot solid based UV sensor shows good photocurrent response and a maximum responsivity of 0.31 (A/W) at a wavelength of 390 nm, is not only competitive when compared with previous reports but also better than ZnS and metal oxide-based photodetectors. The device exhibits a high current value under low-intensity UV light source and an on/off ratio of IUV/Idark = 413 at zero biasing voltage with a fast response. Further, photocurrent device has been constructed using ZnS quantum dot solid nanostructures with graphene hybrids as an active layer to improve the enhancement of photoresponsivity.

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Section: Resultscontrasting

confidence: 57%

Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent

Premkumar

Nataraj

Bharathi

et al. 2019

Sci Rep

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“…In terms of response speed, the individual photoresponse of device A (Figure 2F) can be deconvoluted into a bi‐exponential growth/decay equation:

I ((), t) goodbreak= I_{0} ([], A_{1} \exp ((), goodbreak\pm \frac{t}{τ_{1}}) goodbreak+ A_{2} \exp ((), goodbreak\pm \frac{t}{τ_{2}}))

where I ( t ) and I 0 are the current at time t and asymptotic current under illumination, respectively, and A 1 and A 2 are constants. It can be divided into two regimes: a fast process (

τ_{1}^{rise} / τ_{1}^{fall} : 0.31 / 0.38 normals

) regulated by the photovoltaic effect and a slow process (

τ_{2}^{rise} / τ_{2}^{fall} : 2.6 / 4.1 normals

) regulated by the photoconductive effect 15,32,33 . The first contributor is related to the built‐in potential in the p‐n depletion, which is formed at the n ‐type ZnS NP/p‐type PEDOT:PSS junction.…”

Section: Resultsmentioning

confidence: 99%

“…The first contributor is related to the built‐in potential in the p‐n depletion, which is formed at the n ‐type ZnS NP/p‐type PEDOT:PSS junction. Figure 4A‐1 illustrates the individual energy bands (work function: ϕ ; conduction band: E CB ; and valence band: E VB ) of constituents in device 31–36 . Owing to the difference between ϕ ZnS and ϕ PEDOT:PSS , a built‐in electric field ( V 0 ) with the theoretical magnitude of 0.7 eV was formed in the ZnS NP/PEDOT:PSS depletion (Figure 4A‐2).…”

Section: Resultsmentioning

confidence: 99%

Direct, simple, rapid, and real‐time monitoring of ultraviolet B level in sunlight using a self‐powered and flexible photodetector

Tran

Hur

2022

EcoMat

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Sunlight-originated ultraviolet B (UVB) rays influence daily life in both beneficial and detrimental ways, depending upon light power and exposure time. Therefore, precise and timely UVB irradiance control is of great importance to humans. This study proposes a self-powered and wearable zinc sulfide (ZnS) nanoparticle (NP)-based UVB-C detector for the in situ monitoring of UVB levels in ambient environments. The performance of the ZnS-based photodetector can be markedly enhanced by constructing a vertical p-n heterojunction for testing the feasibility of a self-powered UVB-C detector, employing a thin polyethylenimine (PEI) film for inhibiting current leakage and charge recombination, and introducing a poly(9,9-dioctylfluorene-alt-N-[4-s-butylphenyl]-diphenylamine) (TFB) film as a hole transport layer to increase the photocurrent and enhance the response speed. In particular, we demonstrate that the ZnS NP/TFB junction in the device enables the direct monitoring of narrow and specific UVB bands from sunlight owing to its unique energy band structure and light absorption characteristics. The optimized device has a fast rise/fall time of 50/62 ms, high specific detectivity of 8.20 Â 10 10 Jones, and good stability over long-term storage and against mechanical bending under 254-nm light illumination. Our study provides new insights into self-powered devices that can be implemented for the facile, precise, and rapid estimation of UVB levels under sunlight for various personal healthcare applications.

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“…Wang et al studied the rectifying behavior of UV photodetectors based on Cl-doped ZnS nanoribbons . Kumar et al reported that the photoresponse of ZnS nanoparticles enhanced by ∼15 to 36% by increasing Ni doping in ZnS nanoparticles from 0 to 2 mol % . Wang et al investigated the optoelectrical properties of p-type nitrogen-doped ZnS nanowires for utilizing them as a building block in UV detectors.…”

Section: Introductionmentioning

confidence: 99%

“…22 Kumar et al reported that the photoresponse of ZnS nanoparticles enhanced by ∼15 to 36% by increasing Ni doping in ZnS nanoparticles from 0 to 2 mol %. 23 Wang et al investigated the optoelectrical properties of ptype nitrogen-doped ZnS nanowires for utilizing them as a building block in UV detectors. They found that the device exhibits high photocurrent gain with considerable spectral selectivity and UV sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Fast-Response Metal–Semiconductor–Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method

et al. 2021

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In this work, Mn2+-doped ZnS nanorods were synthesized by a facile hydrothermal method. The morphology, structure, and composition of the as-prepared samples were investigated. The temperature-dependent photoluminescence of ZnS:Mn nanorods was analyzed, and the corresponding activation energies were calculated by using a simple two-step rate equation. Mn2+-related orange emission (4T1 → 6A1) demonstrates high stability and is comparatively less affected by the temperature variations than the defect-related emission. A metal–semiconductor–metal junction ultraviolet photodetector based on the nanorod networks has been fabricated by a cost-effective method. The device exhibits visible blindness, superior ultraviolet photodetection with a responsivity of 1.62 A/W, and significantly fast photodetection response with the rise and decay times of 12 and 25 ms, respectively.

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Efficient UV photodetectors based on Ni-doped ZnS nanoparticles prepared by facial chemical reduction method

Cited by 41 publications

References 57 publications

Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent

Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent

Direct, simple, rapid, and real‐time monitoring of ultraviolet B level in sunlight using a self‐powered and flexible photodetector

Fast-Response Metal–Semiconductor–Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method

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