Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis

Poulvellarie, Nicolas; Arabí, Carlos Mas; Ciret, Charles; Combrié, Sylvain; Rossi, Alfredo De; Haelterman, Marc; Raineri, Fabrice; Kuyken, Bart; Gorza, Simon-Pierre; Léo, François

doi:10.1364/ol.418064

Cited by 9 publications

(3 citation statements)

References 24 publications

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“…2 for the pump (940 nm), idler (1550 nm), and signal (2389 nm). It is also observed that the longitudinal components are not negligible [47]. They are taken into account in the coupling coefficient given in Eq.…”

Section: Resultsmentioning

confidence: 99%

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Madsen¹,

Ulsig²,

Godoy³

et al. 2023

J. Opt. Soc. Am. B

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A design study is presented for difference-frequency generation (DFG) to the mid-infrared (MIR) at 2.3 µm in AlGaAs waveguides heterogeneously integrated on silicon. Perfect phase matching (PhM) is achieved in simulations by engineering the dimensions of the waveguide and by tuning the wavelengths of the input sources. An optimal design of the waveguide is found with a width of 1196 nm and height of 146 nm with a length of about 5 mm. We expect a signal output power of about 1 mW at 2389 nm and a wavelength range from 2231 to 2574 nm by the use of tunable sources around 940 and 1550 nm. The tolerance of the input wavelengths and waveguide dimensions required for perfect PhM is also estimated showing the feasibility of the fabrication. This offers a promising design for a compact MIR source on a chip to be used for gas sensing, in particular for carbon monoxide and ammonia, and for DFG of single photons to the C-band.

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Section: Resultsmentioning

confidence: 99%

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Madsen¹,

Ulsig²,

Godoy³

et al. 2023

J. Opt. Soc. Am. B

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“…Three main integration routes, namely, bonding technology, heteroepitaxial growth, and flip-chip integration, are currently exploited. Wafer-bonding technologies require a root mean squared (RMS) roughness of 0.5 nm to achieve molecular adhesion or the use of adhesive layers, commonly BCB, which can induce stress and inhomogeneities . Similarly, the ≈8% lattice mismatch between III–V and Si leads to large defect densities in heteroepitaxial growth, partially overcome by the use of large buffer layers .…”

Section: Introductionmentioning

confidence: 99%

“…From an InGaP lattice-matched to GaAs nanolayer of 250 nm (1), InGaP WGs are patterned (2) for later AZ 4562 coating (3). A SiO 2 is coated with PMMA and AZ 4562 (4) for later pressing against the sample after adding diluted PR within the interface (5) to obtain a cross-linked interface (6). Finally, the GaAs substrate is back-etched (7), yielding suspended InGaP WGs (8).…”

Section: ■ Introductionmentioning

confidence: 99%

Low-Temperature Bonding of Nanolayered InGaP/SiO₂ Waveguides for Spontaneous-Parametric Down Conversion

Amores

Świłło

2022

ACS Appl. Nano Mater.

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The integration of III–V materials on photonic integrated circuits has enjoyed a lot of attention because of the necessity of merging photon sources with silicon electronics. Nevertheless, III–V source integration technologies are not sufficiently mature, inhibiting the employment of such platforms to a broader range of applications. Here, we present a novel approach that enables the transfer of III–V nanolayers (≈250 nm) to silicates via oxide bonding. Through use of a thick photoresist scaffold (≈30 μm), complete removal of the substrate can be performed while preserving the relative structure morphology. The use of the III–V native oxide without depositing interfacial oxide layers greatly reduces the processing time and cost. The transfer of an array composed of 1 mm long InGaP waveguides with 250 nm thickness and widths spanning from 0.7 to 11.2 μm to a SiO2 substrate has been experimentally demonstrated, evidencing the feasibility of the technique for wafer-scale processing. The application of the nanolayered waveguides in the spontaneous-parametric down-conversion process has been tested by photon-correlation measurement, showing good agreement with the theoretical model.

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Ultrafast second-order nonlinear photonics—from classical physics to non-Gaussian quantum dynamics: a tutorial

Jankowski,

Yanagimoto,

et al. 2024

Adv. Opt. Photon.

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Photonic integrated circuits with second-order (χ(2)) nonlinearities are rapidly scaling to remarkably low powers. At this time, state-of-the-art devices achieve saturated nonlinear interactions with thousands of photons when driven by continuous-wave lasers, and further reductions in these energy requirements enabled by the use of ultrafast pulses may soon push nonlinear optics into the realm of single-photon nonlinearities. This tutorial reviews these recent developments in ultrafast nonlinear photonics, discusses design strategies for realizing few-photon nonlinear interactions, and presents a unified treatment of ultrafast quantum nonlinear optics using a framework that smoothly interpolates from classical behaviors to the few-photon scale. These emerging platforms for quantum optics fundamentally differ from typical realizations in cavity quantum electrodynamics due to the large number of coupled optical modes. Classically, multimode behaviors have been well studied in nonlinear optics, with famous examples including soliton formation and supercontinuum generation. In contrast, multimode quantum systems exhibit a far greater variety of behaviors, and yet closed-form solutions are even sparser than their classical counterparts. In developing a framework for ultrafast quantum optics, we identify what behaviors carry over from classical to quantum devices, what intuition must be abandoned, and what new opportunities exist at the intersection of ultrafast and quantum nonlinear optics. Although this article focuses on establishing connections between the classical and quantum behaviors of devices with χ(2) nonlinearities, the frameworks developed here are general and are readily extended to the description of dynamical processes based on third-order χ(3) nonlinearities.

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Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis

Cited by 9 publications

References 24 publications

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Low-Temperature Bonding of Nanolayered InGaP/SiO₂ Waveguides for Spontaneous-Parametric Down Conversion

Ultrafast second-order nonlinear photonics—from classical physics to non-Gaussian quantum dynamics: a tutorial

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Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis

Cited by 9 publications

References 24 publications

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides

Low-Temperature Bonding of Nanolayered InGaP/SiO2 Waveguides for Spontaneous-Parametric Down Conversion

Ultrafast second-order nonlinear photonics—from classical physics to non-Gaussian quantum dynamics: a tutorial

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Low-Temperature Bonding of Nanolayered InGaP/SiO₂ Waveguides for Spontaneous-Parametric Down Conversion