Efficient transparent quantum-dot light-emitting diodes with an inverted architecture

Abstract

Transparent quantum-dot light-emitting diodes (Tr-QLEDs) with an inverted architecture has been developed. The inverted Tr-QLEDs are designed for integrating with thin-film transistors (TFTs) circuit easily. The 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN) is employed as a hole injection layer (HIL) as well as a buffer layer in the inverted Tr-QLEDs. An optimized HAT-CN as dual-functional modified layer facilitates charge injection balance and meanwhile reduces the plasma damage caused by sputtering process. High performance device with a peak current efficiency (CE) and maximum external quantum efficiency (EQE) of 14.7 cd/A and 11.3% was obtained, wherein the EQE is the highest record for Tr-QLEDs. The transmittance of the Tr-QLEDs at 550 nm reached up to 78%. These Tr-QLEDs possess potential for the next-generation transparent displays applications.