Efficient TE-Polarized Mode-Order Converter Based on High-Index-Contrast Polygonal Slot in a Silicon-on-Insulator Waveguide

Hao, Lijun; Xiao, Rulei; Shi, Yuechun; Dai, Pan; Zhao, Yong; Lu, Jun; Chen, Xiangfei

doi:10.1109/jphot.2019.2907640

Cited by 27 publications

(20 citation statements)

References 30 publications

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“…Waveguide with polygonal slot [226] TE 0 -to-TE 2 (Theory) 2 × 8 <0.03 <−26.4 100 Figure 12. 2D temperature distribution of the hybrid graphene-silicon waveguide.…”

Section: Graphene-silicon Hybrid Devicesmentioning

confidence: 99%

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

Zhang

Qiu

et al. 2020

Adv Materials Technologies

137

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Silicon photonics has attracted tremendous interest from academia and industry, as the fabrication of the silicon family of photonic devices is mostly compatible with the microelectronics process using complementary metal‐oxide semiconductors (CMOS). Herein, three silicon‐family materials are discussed: silicon, silicon nitride, and silica. In addition, hybrid integration with a 2D material, graphene, is examined. First, the material and waveguide properties are reviewed. Second, typical fabrication processes for waveguide devices are introduced. Subsequently, a variety of passive waveguide devices, operating at different physical dimensions covering wavelength, polarization, and mode, are discussed. They correspond to fixed and tunable filters, polarization beam splitters and rotators, and mode conversion and multiplexing devices. These passive waveguide devices play important roles in a wide range of applications including telecom, interconnects, computing, sensing, quantum information processing, bio‐photonics, and energy.

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“…Waveguide with polygonal slot [226] TE 0 -to-TE 2 (Theory) 2 × 8 <0.03 <−26.4 100 Figure 12. 2D temperature distribution of the hybrid graphene-silicon waveguide.…”

Section: Graphene-silicon Hybrid Devicesmentioning

confidence: 99%

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

Zhang

Qiu

et al. 2020

Adv Materials Technologies

137

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“…For example, by introducing deeply or shallowly etched slots on the silicon waveguide, conversion from fundamental TE 0 (TM 0 ) mode to higher-order TE 1 or TE 2 (TM 1 or TM 2 ) modes have been demonstrated. The mode conversion length can be reduced to less than 10 μm [ 17 , 18 , 19 , 20 ]. Methods, such as inverse design [ 21 ], deep learning [ 22 ], and topology optimization [ 23 ], have been employed to find the optimum structure for mode conversion based on the silicon waveguide.…”

Section: Introductionmentioning

confidence: 99%

“…Most of the reported mode converters to date perform a single mode conversion function only. They cannot perform two or more mode conversion functions, and are not reconfigurable, extensible, or programmable either [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 24 , 25 , 26 ]. These functions however are essential for the realization of on-chip multimode photonics.…”

Section: Introductionmentioning

confidence: 99%

“…The embedded tapering structure has little impact on the mode transmission, resulting in TE 0 mode at the output. Therefore, reconfigurable mode conversions between TE 0 and TE 1 mode can be achieved by controlling the operating state of the material Sb 2 Se 3 , while previous reports nearly do not have such reconfigurable function [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 24 , 25 , 26 ]. Our calculations show that the required mode conversion length is only 2.3 μm, which is quite shorter than most previous reports [ 15 , 16 , 17 , 19 , 20 , 21 , 24 , 25 ].…”

Section: Introductionmentioning

confidence: 99%

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On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials

Fei

Huang

et al. 2022

Nanomaterials

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Reconfigurable mode converters are essential components in efficient higher-order mode sources for on-chip multimode applications. We propose an on-chip reconfigurable silicon waveguide mode conversion scheme based on the nonvolatile and low-loss optical phase change material antimony triselenide (Sb2Se3). The key mode conversion region is formed by embedding a tapered Sb2Se3 layer into the silicon waveguide along the propagation direction and further cladding with graphene and aluminum oxide layers as the microheater. The proposed device can achieve the TE0-to-TE1 mode conversion and reconfigurable conversion (no mode conversion) depending on the phase state of embedded Sb2Se3 layer, whereas such function could not be realized according to previous reports. The proposed device length is only 2.3 μm with conversion efficiency (CE) = 97.5%, insertion loss (IL) = 0.2 dB, and mode crosstalk (CT) = −20.5 dB. Furthermore, the proposed device scheme can be extended to achieve other reconfigurable higher-order mode conversions. We believe the proposed reconfigurable mode conversion scheme and related devices could serve as the fundamental building blocks to provide higher-order mode sources for on-chip multimode photonics.

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“…Typically, Mach-Zehnder interferometer (MZI) structures are utilized, given that the phase differences between their arms can be flexibly tuned [16,46,47]. (iv) Metasurface: Recently, quite a few mode converters based on metasurface structures have been proposed for both the TE polarization [48][49][50][51][52][53][54][55] and the TM polarization [56,57]. The mode conversion between two specific modes is achieved by imposing specific refractive-index perturbations on a silicon waveguide.…”

Section: Introductionmentioning

confidence: 99%

Scalable Metasurface Building Blocks for Arbitrary On-chip High-order Mode Manipulation

Xiang

Tao

Zhao

et al. 2020

2020 European Conference on Optical Communications (ECOC)

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On-chip integrated mode-division multiplexing (MDM) has been emerging as a promising technology to further improve the link capacity and satisfy the continuously increasing bandwidth demand in data communications. One of the most important components in MDM and multimode photonics is a mode converter. While several configurations have been developed to realize on-chip mode converters, it is still very challenging to achieve versatile high-order mode converters with high performance in a generic way to reduce the R&D and prototyping costs. Here we initiate a breakthrough utilizing a simple yet universal generic building block concept with metasurface structures to implement programmable arbitrary highorder mode converters with competitive performance, high reliability and compact footprints. The building block, i.e., the TE0-TE2 mode converter is first introduced to illustrate the generic concept, which exhibits low insertion loss of 0.3 dB, low crosstalk of -10 dB across broad wavelength band of 250 nm with a footprint of 2.7×1.3 µ 2 m . All even-order and odd-order mode converters can be realized by directly programming multiple parallel basic building blocks and coarsely engineering the waveguide widths simply in a universal approach. The proposed mode converter building blocks for high-order mode conversion highlight features of uniform performance with broad bandwidth, low insertion loss, compact footprints and good fabrication tolerance, plus the uniquely simple and scalable generic fashion, making them extremely attractive for on-chip multimode optical interconnections.

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Efficient TE-Polarized Mode-Order Converter Based on High-Index-Contrast Polygonal Slot in a Silicon-on-Insulator Waveguide

Cited by 27 publications

References 30 publications

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials

Scalable Metasurface Building Blocks for Arbitrary On-chip High-order Mode Manipulation

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