Efficient Sb2(S,Se)3 solar cells via monitorable chemical bath deposition

Li, Sen; Lu, Shuaicheng; Lu, Yue; Xue, Jiayou; Li, Kanghua; Chen, Chao; Tang, Jiang

doi:10.1039/d2ta01465c

Cited by 22 publications

(8 citation statements)

References 51 publications

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“…Meanwhile, τ TPV and τ TPC of a sputtered ZnO device are 13.4 and 2.1 μs, respectively. The longer recombination time and shorter extraction time usually mean a better p – n junction . The above results imply that the interface and junction quality of a sputtered ZnO device is better than that of a sol–gel ZnO device.…”

Section: Resultsmentioning

confidence: 78%

High-Performance Colloidal Quantum Dot Photodiodes via Suppressing Interface Defects

Liu

Yang

et al. 2023

ACS Appl. Mater. Interfaces

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PbS colloidal quantum dot (CQD) infrared photodiodes have attracted wide attention due to the prospect of developing cost-effective infrared imaging technology. Presently, ZnO films are widely used as the electron transport layer (ETL) of PbS CQDs infrared photodiodes. However, ZnO-based devices still suffer from the problems of large dark current and low repeatability, which are caused by the low crystallinity and sensitive surface of ZnO films. Here, we effectively optimized the device performance of PbS CQDs infrared photodiode via diminishing the influence of adsorbed H2O at the ZnO/PbS CQDs interface. The polar (002) ZnO crystal plane showed much higher adsorption energy of H2O molecules compared with other nonpolar planes, which could reduce the interface defects induced by detrimentally adsorbed H2O. Based on the sputtering method, we obtained the [002]-oriented and high-crystallinity ZnO ETL and effectively suppressed the adsorption of detrimental H2O molecules. The prepared PbS CQDs infrared photodiode with the sputtered ZnO ETL demonstrated lower dark current density, higher external quantum efficiency, and faster photoresponse compared with the sol–gel ZnO device. Simulation results further unveiled the relationship between interface defects and device dark current. Finally, a high-performance sputtered ZnO/PbS CQDs device was obtained with a specific detectivity of 2.15 × 1012 Jones at −3 dB bandwidth (94.6 kHz).

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Section: Resultsmentioning

confidence: 78%

High-Performance Colloidal Quantum Dot Photodiodes via Suppressing Interface Defects

Liu

Yang

et al. 2023

ACS Appl. Mater. Interfaces

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“…The strong PL emission peaks located at ∼822 nm, and the weak PL emission shoulder peaks appeared at ∼832 nm. When the Se content in Sb 2 S 3– y Se y thin films increased, the corresponding PL emission peaks red-shifted . Because the Se content in Sb 2 S 3– y Se y thin films using the hydrothermal method was inhomogeneous and gradient distribution (the EDS line scan profile of the Sb 2 S 3– y Se y thin films is shown in Figure S10 of the Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…The 40 nm thick compact and full-coverage CdCl 2 -Air-CdS without the appearance of the residual CdCl 2 was successfully prepared by the precise preparation strategy with the combination of adjusting the thickness of CdS thin films prepared by CBD and changing the concentration of the CdCl 2 methanol solution in the post-treatment process. The corresponding TSCs achieved the best PCE of 8.46% with the V oc of 0.65V, J sc of 19.69 mA• cm −2 , and FF of 66.50%, and the average PCE of 8.24 ± 0.13% with the V oc of 0.64 ± 0.01 V, J sc of 19…”

Section: Discussionmentioning

confidence: 97%

Precise Preparation of CdS Thin Films for Efficient Sb₂S_3–ySe_y Thin-Film Solar Cells

Han

Shi

Huang

et al. 2023

ACS Appl. Energy Mater.

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In this work, CdS thin films were prepared by chemical bath deposition (CBD) and Sb2S3–y Se y thin films were prepared by a hydrothermal method. Solar cells with the architecture of FTO/CdS/Sb2S3–y Se y /spiro-OMeTAD/Au were fabricated to evaluate the quality of CdS thin films as the electron transport layer. The precise preparation strategy with the combination of adjusting the thickness of CdS thin films prepared by CBD and changing the concentration of the CdCl2 methanol solution in the post-treatment process was first proposed. When the CdS thin-film thicknesses were 100, 80, 65, and 40 nm and the CdCl2 methanol solution concentration was 20 mg·mL–1, the power conversion efficiencies (PCEs) of the corresponding solar cells were 7.32% of 100 nm, 7.62% of 80 nm, 8.00% of 65 nm, and 7.55% of 40 nm. When the CdS thin-film thickness was 40 nm and the CdCl2 methanol solution concentrations decreased to 15, 13.3, 10, and 5 mg·mL–1, the PCEs were 7.98% of 15 mg·mL–1, 8.46% of 13.3 mg·mL–1, 7.71% of 10 mg·mL–1, and 7.31% of 5 mg·mL–1. Therefore, the 40 nm thick compact and full-coverage CdS thin film without the appearance of residual CdCl2 can be successfully obtained using the precise preparation strategy and achieved an optimal PCE of 8.46%. The precise preparation strategy is also valuable to develop the ultrathin, compact, and full-coverage CdS thin film as the electron transport layer for CdTe thin-film solar cells.

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“…Moreover, the films can be sandwiched between an inorganic electron transport layer and polymer hole transport layer (HTL) 13–16 to construct solar cells. Recently, the Tang group 17 reported a monitorable chemical bath deposition (CBD) approach for the synthesis of Sb 2 (S,Se) 3 thin films. The as-prepared thin films were used in solar cells, attaining a champion photoelectric conversion efficiency of 8.27%.…”

Section: Introductionmentioning

confidence: 99%

Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

et al. 2023

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Efficient Sb₂(S,Se)₃ solar cells via monitorable chemical bath deposition

Abstract: The efficiency of Sb2(S,Se)3 solar cells prepared by hydrothermal method break the bottleneck of 10% recently. However, limited by the black-box hydrothermal process, the important experimental details such as the...

Cited by 22 publications

References 51 publications

High-Performance Colloidal Quantum Dot Photodiodes via Suppressing Interface Defects

High-Performance Colloidal Quantum Dot Photodiodes via Suppressing Interface Defects

Precise Preparation of CdS Thin Films for Efficient Sb₂S_3–ySe_y Thin-Film Solar Cells

Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

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Efficient Sb2(S,Se)3 solar cells via monitorable chemical bath deposition

Abstract: The efficiency of Sb2(S,Se)3 solar cells prepared by hydrothermal method break the bottleneck of 10% recently. However, limited by the black-box hydrothermal process, the important experimental details such as the...

Cited by 22 publications

References 51 publications

High-Performance Colloidal Quantum Dot Photodiodes via Suppressing Interface Defects

High-Performance Colloidal Quantum Dot Photodiodes via Suppressing Interface Defects

Precise Preparation of CdS Thin Films for Efficient Sb2S3–ySey Thin-Film Solar Cells

Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

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Efficient Sb₂(S,Se)₃ solar cells via monitorable chemical bath deposition

Precise Preparation of CdS Thin Films for Efficient Sb₂S_3–ySe_y Thin-Film Solar Cells