Efficient Room-Temperature Operation of a Quantum Dot Spin-Polarized Light-Emitting Diode under High-Bias Conditions

Etou, Kohei; Hiura, Satoshi; Park, Soyoung; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

doi:10.1103/physrevapplied.19.024055

Cited by 8 publications

(3 citation statements)

References 32 publications

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“…A previous time-resolved PL study of GaNAs QW-InGaAs QD tunnel-coupled structures demonstrated that the PL intensity rises much faster than the increase in the PL polarization, which reflects the direct spin injection from the GaAs barrier into the QDs. 35 Therefore, we can conclude that the initial PL polarization of approximately 15–20% is mainly affected by the direct spin injection from the GaAs barrier. This initial PL polarization, which is much lower than the initial spin polarization of 50% generated in the GaAs barrier, can be attributed to DP spin relaxation in GaAs before injection into the QDs.…”

Section: Resultsmentioning

confidence: 82%

Room-temperature electric field control of spin filtering efficiency for enhanced modulation of optical spin polarization in a defect-functional 0D–2D hybrid nanostructure

Park,

Hiura,

Kise

et al. 2023

Nanoscale

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Section: Resultsmentioning

confidence: 82%

Room-temperature electric field control of spin filtering efficiency for enhanced modulation of optical spin polarization in a defect-functional 0D–2D hybrid nanostructure

Park,

Hiura,

Kise

et al. 2023

Nanoscale

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“…The first feature is that the InGaAs‐based active layer is sandwiched between the AlGaAs barriers, which behave as carrier blocking layers. [ 28 ] Optically generated carriers can be confined in the active layer due to the promoted reinjection of carriers that are thermally escaped from the QDs to the GaAs barriers. [ 27 ] This structure leads to a strong luminescence of the QDs even at room temperature.…”

Section: Resultsmentioning

confidence: 99%

Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure

Park

Hiura

Takayama

et al. 2022

Adv Elect Materials

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Manipulation of the optical spin orientation in semiconductors is a key technology for realizing spin‐based photoelectric information processing. Application of magnetic field is a simple method to control the spin polarization degree through Zeeman splitting. However, this effect can only be achieved at cryogenic temperatures and in a strong magnetic field. Here, room‐temperature voltage control of optical polarization in the range of 3–15%, corresponding to a 12–60% change in relative spin polarization is demonstrated. For this, a III‐V semiconductor quantum dot tunnel coupled with a quantum well spin reservoir is used. The spin‐flip scattering rate within quantum dots is electric‐field‐controlled in the time domain of several tens of picoseconds. This is achieved by precise control of the tunnel injection efficiency of electrons and holes via coupled potential modification. The findings will pave the way for the generation of ultrafast spin‐modulated optical signals by the electric field effect.

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“…[ 26,27 ] The chiral layer can function as a spin filter and produces a spin‐polarized current. Currently, several spin injection materials have been reported, for instance, (R‐/S‐MBA) 2 PbI 4 , [ 28 ] CoFeB/MgO, [ 29 ] Fe∕AlGaA, [ 30 ] p‐Al 0.15 Ga 0.85 As, [ 31 ] InAs QDs, [ 32 ] and (Ga,Mn)As, [ 33 ] for the fabrication of spin‐LED.…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processed and Room‐Temperature Spin Light‐Emitting Diode Based on Quantum Dots/Chiral Metal‐Organic Framework Heterostructure

Mustaqeem

Chou

Kamal

et al. 2023

Adv Funct Materials

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Spin optoelectronics is an indispensable key for the future development of spintronics. In conventional spin light emitting diodes (LEDs), spin‐polarized carrier pairs are injected electrically into the light emitting layer and create circularly polarized light (CPL). Generally, spin‐polarized carriers are accomplished using ferromagnetic contacts or applying an external magnetic field, which will produce several drawbacks, including low temperature operation, low spin‐polarized carriers injection efficiency, etc. To circumvent the existing shortcomings, here, an alternative approach is proposed and achieves spin‐polarized LEDs at room temperature based on quantum dots (QDs)/chiral metal‐organic framework heterojunction without using ferromagnetic contacts or magnetic fields. The spin‐polarized injected layer composed of self‐assembled monolayer (SAM)/Chiral‐MOF ([Sr(9,10‐adc)(DMAc)2]n)) film, which produces spin‐polarized holes with spin orientation, determining the polarization and strength of circularly polarized electroluminescence (CP‐EL). The spin‐QLED emits CP‐EL at a rate of 12.24% efficiency, which provides an excellent alternative to generate new functionality for conventional QLEDs. The approach is anticipated to be very useful, enabling to offer a general methodology for generating not yet realized spin optoelectronic devices.

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Efficient Room-Temperature Operation of a Quantum Dot Spin-Polarized Light-Emitting Diode under High-Bias Conditions

Cited by 8 publications

References 32 publications

Room-temperature electric field control of spin filtering efficiency for enhanced modulation of optical spin polarization in a defect-functional 0D–2D hybrid nanostructure

Room-temperature electric field control of spin filtering efficiency for enhanced modulation of optical spin polarization in a defect-functional 0D–2D hybrid nanostructure

Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure

Solution‐Processed and Room‐Temperature Spin Light‐Emitting Diode Based on Quantum Dots/Chiral Metal‐Organic Framework Heterostructure

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