Efficient photoluminescence from pulsed laser ablated nanostructured indium oxide films

Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

“…oxygen vacancies. 37,38 Accordingly, a reference sample of pure In 2 O 3 prepared from the indium oximato precursor yielded similar peaks (Fig. 4b).…”

Effect of tantalum doping on the structural and optical properties of RF magnetron sputtered indium oxide thin films

“…It is found that the refractive indices of the Ta doped films at the wavelength 550 nm lie within the range 1.8-2.1 (Table 1) and the reported values for RF sputtered In 2 O 3 films at this wavelength is in the range 1.84-2.24 [44].…”

“…High crystal quality and the quantum confinement effect related to the nanostructures are two factors favouring the increase of UV emission at room temperature [45] and the DL emission arises due to structural defects (extrinsic or intrinsic) [46]. Beena et al [44,47] have reported efficient photoluminescence emission in the UV region from pulsed laser ablated indium oxide thin films. The room temperature photoluminescence spectra recorded for the post-annealed Ta doped In 2 O 3 samples for excitation wavelength of 250 nm are shown in Fig.…”