2022
DOI: 10.1016/j.mtener.2022.101038
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Efficient passivation of surface defects by lewis base in lead-free tin-based perovskite solar cells

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Cited by 21 publications
(17 citation statements)
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References 56 publications
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“…In contrast, no measurable shift of Pb 4 f binding energy was recorded for 10/50 nm‐thick perovskite layer on NiO x /SBTI (Figure 3h), demonstrating that the interface defects are effectively passivated by CO groups of SBTI that act as Lewis bases for defect‐healing by interacting with uncoordinated Pb 2+ . [ 35 ] This chemical environment promotes similar crystal growth conditions at the interface as in the bulk films, thus leading to uniform grain size distribution. Furthermore, the improved interface properties between the perovskite and NiO x with SBTI are advantageous to enhance the quality of perovskite films.…”
Section: Resultsmentioning
confidence: 99%
“…In contrast, no measurable shift of Pb 4 f binding energy was recorded for 10/50 nm‐thick perovskite layer on NiO x /SBTI (Figure 3h), demonstrating that the interface defects are effectively passivated by CO groups of SBTI that act as Lewis bases for defect‐healing by interacting with uncoordinated Pb 2+ . [ 35 ] This chemical environment promotes similar crystal growth conditions at the interface as in the bulk films, thus leading to uniform grain size distribution. Furthermore, the improved interface properties between the perovskite and NiO x with SBTI are advantageous to enhance the quality of perovskite films.…”
Section: Resultsmentioning
confidence: 99%
“…39–41 The increased crystallinity of the perovskite phase in the DCB-passivated films is likely due to the removal of free PbI 2 and interstitial and uncoordinated Pb 2+ on the surface of the grains and at the grain boundaries. 9,24–29…”
Section: Resultsmentioning
confidence: 99%
“…[ 53,61,62 ] XPS and UV–vis were used to study the elemental composition and chemical state of ALD SiAl x O y /SiO 2 . [ 63 ] We found that the optimized low‐temperature ALD process did not cause any damage to the perovskite absorber layer. A series of analyses and tests show that the carrier recombination with a water vapor barrier device is reduced, and the conversion efficiency of the device is increased to 19.16% from 17.08%.…”
Section: Introductionmentioning
confidence: 99%