Low‐Temperature Atomic Layer Deposition of Double‐Layer Water Vapor Barrier for High Humidity Stable Perovskite Solar Cells

Yang, Yifan; Zhang, Yujing; Li, Ran; Mbumba, Manala Tabu; Akram, Muhammad Waleed; Pan, Jia Hong; Dai, Songyuan; Guli, Mina

doi:10.1002/adom.202300148

Cited by 5 publications

(1 citation statement)

References 71 publications

(99 reference statements)

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“…Their overarching goal is to meticulously optimize the properties of thin-film layers [3][4][5][6][7][8]. Moreover, there is a concerted effort to unravel the intricate effects of doping on the performance, stability, and advancement of various deposition processes used for crafting high-quality perovskite films and coated layers, a pursuit that is being pursued with vigor and dedication [9][10][11][12][13]. In the intricate realm of PSC manufacturing, the primary deposition techniques employed for constructing top-tier thin films are the universal vapor-and solution-based deposition methods.…”

Section: Introductionmentioning

confidence: 99%

An Alternative to Chlorobenzene as a Hole Transport Materials Solvent for High-Performance Perovskite Solar Cells

Lee,

Lim,

Kim

et al. 2023

Crystals

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Spiro-OMeTAD is a widely used hole-transporting layer (HTL) material, characterized by high hole mobility and good film-forming properties, in perovskite solar cells (PSCs). However, this material has high synthesis costs, low solubility, dependence on hygroscopic dopants, and a low commercial potential. Recently, we investigated alternative materials with good solubility, simple synthetic methods, and good electrical characteristics for use as hole transport materials (HTM) in triple-cation PSCs. Herein, (E,E,E,E)-4,4′,4″,4′″-[Benzene-1,2,4,5-tetrayltetrakis(ethene-2,1-diyl)]tetrakis[N,N-bis(4-methoxyphenyl)aniline], which has a small molecular weight and similar properties to Spiro-OMeTAD, was assessed for use as a HTM via a pre-test of device performance, including its electrical properties, surface morphology, and coating process method, with PSC efficiencies routinely surpassing 20%. A remarkable open-circuit voltage of 1.111, along with a photovoltaic efficiency of 20.18% was obtained in PSCs using this HTM with dichloromethane (DCM) instead of chlorobenzene, indicative of its potential for the fabrication of resistance components with improved surface uniformity. These results provide insights into DCM as an efficient solvent for small molecule-based HTM.

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Section: Introductionmentioning

confidence: 99%

An Alternative to Chlorobenzene as a Hole Transport Materials Solvent for High-Performance Perovskite Solar Cells

Lee,

Lim,

Kim

et al. 2023

Crystals

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Microstructure and Water Vapor Barrier Performance of Organic‐Bridged Polysilsesquioxane/Carbon Quantum Dots Composite Coatings

Zhang,

Ma,

Yao

et al. 2023

Adv Eng Mater

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Developing siloxane‐based coatings with excellent water vapor barrier ability is of great importance due to their wide applications for various optical‐related fields. To improve the water vapor barrier ability of polysilsesquioxane coatings, this research proposes a strategy of introducing carbon quantum dots (CQDs) into organic‐bridged polysilsesquioxane coatings to enhance their water vapor barrier property. The CQDs are prepared by the pyrolysis of citric acid and then the composite coatings are prepared by thioether‐ester‐bridged silsesquioxane precursor in situ hydrolysis and condensation in the presence of CQDs. The experimental results show that the CQDs disperse well in the polysilsesquioxane matrix which is conducive to provide long diffusion pathway of water vapor molecules and also introduce individual “bubble pores” into the composite coatings. Thus‐obtained composite coatings not only show fivefold enhancement in water vapor barrier ability compared to the polysilsesquioxane coating without CQDs, but also perform good light transparence and good UV radiation‐resistant property, which would satisfy the requirements of optical‐related moisture‐resistant application fields.

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An Impressive Open‐Circuit Voltage of 1.223 V and High Humidity Stability of Perovskite Solar Cells with MgO Buffer Layer Deposited by Low‐Temperature Atomic Layer Deposition

Guli,

Zhang,

et al. 2024

Small

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The performance of perovskite solar cells has been continuously improving. However, humidity stability has become a key problem that hinders its promotion in the process of commercialization. A buffer layer deposited by atomic layer deposition is a very helpful method to solve this problem. In this work, MgO film is deposited between Spiro‐OMeTAD and electrode by low‐temperature atomic layer deposition at 80 °C, which resists the erosion of water vapor, inhibits the migration of electrode metal ions and the decomposition products of perovskite, then finally improves the stability of the device. At the same time, the MgO buffer layer can passivate the defects of porous Spiro, thus enhancing carrier transport efficiency and device performance. The Cs0.05(FAPbI3)0.85(MAPbBr3)0.15 perovskite device with a MgO buffer layer has displayed PCE of 22.74%, also with a high Voc of 1.223 V which is an excellent performance in devices with same perovskite component. Moreover, the device with a MgO buffer layer can maintain 80% of the initial efficiency after 7200 h of storage at 35% relative humidity under room temperature. This is a major achievement for humidity stability in the world, providing more ideas for further improving the stability of perovskite devices.

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Low‐Temperature Atomic Layer Deposition of Double‐Layer Water Vapor Barrier for High Humidity Stable Perovskite Solar Cells

Cited by 5 publications

References 71 publications

An Alternative to Chlorobenzene as a Hole Transport Materials Solvent for High-Performance Perovskite Solar Cells

An Alternative to Chlorobenzene as a Hole Transport Materials Solvent for High-Performance Perovskite Solar Cells

Microstructure and Water Vapor Barrier Performance of Organic‐Bridged Polysilsesquioxane/Carbon Quantum Dots Composite Coatings

An Impressive Open‐Circuit Voltage of 1.223 V and High Humidity Stability of Perovskite Solar Cells with MgO Buffer Layer Deposited by Low‐Temperature Atomic Layer Deposition

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