Efficient field emission from an individual aligned carbon nanotube bundle enhanced by edge effect

Fujii, Shunjiro; Honda, Shinya; Machida, Haruhiko; Kawai, H.; Ishida, K.; Katayama, Mitsuhiro; Furuta, Hiroshi; Hirao, Takashi; Oura, Kenjiro

doi:10.1063/1.2721876

Cited by 106 publications

(57 citation statements)

References 25 publications

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“…In particular, the turn-on field (at 1 µA/cm 2 ) and the threshold field (at 10 mA/cm 2 ) for CNTs are found to be less than 1 and 5 V/µm, respectively. [29][30][31] The turn-on field that we obtain for the ZnO nanostructures in the present work is in the range of 1-3 V/µm, and the corresponding threshold field could be higher than 5 V/µm. The lower performance is believed to be due to the larger diameter of individual ZnO nanopillars (∼100 nm) than CNTs (<20 nm) and to the lower conductivity of ZnO nanostructures than CNTs.…”

Section: Resultsmentioning

confidence: 79%

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

et al. 2008

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One-dimensional ZnO nanopillars of diameter 80-120 nm and two-dimensional nanowalls of thickness 100-300 nm are electrochemically grown at 70°C on a flexible polyester substrate. The low turn-on electric fields measured at a current density of 1 µA/cm 2 for nanopillars (1.2 V/µm) and nanowalls (2.2 V/µm) illustrate their superior field emission properties to most of the reported ZnO nanostructures. The present method of direct electrodeposition of ZnO on plastic without the need of template or catalyst offers a low-cost technique for fabricating field emission devices on flexible substrates for large-area display and other technologies.

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Section: Resultsmentioning

confidence: 79%

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

et al. 2008

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“…In addition, during the field emission measurement, arcing was usually observed under a high electric field from the CNT emitters fabricated by the screen-printing or the spraying methods whereas it was very rare from the CNT emitters fabriform the cathode. The edge of the circular disk was ground to avoid edge emission [13]. Then, the conductive adhesive tape with CNT film faced up was set on the protruded circular disk.…”

Section: Resultsmentioning

confidence: 99%

Excellent field emission properties from carbon nanotube field emitters fabricated using a filtration-taping method

Shin¹,

Jung²,

Yun³

et al. 2014

Carbon letters

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A filtration-taping method was demonstrated to fabricate carbon nanotube (CNT) emitters. This method shows many good features, including high mechanical adhesion, good electrical contact, low temperature, organic-free, low cost, large size, and suitability for various CNT materials and substrates. These good features promise an advanced field emission performance with a turn-on field of 0.88 V/mm at a current density of 0.1 mA/cm 2 , a threshold field of 1.98 V/mm at a current density of 1 mA/cm 2 , and a good stability of over 20 h. The filtration-taping technique is an effective way to realize low-cost, large-size, and high-performance CNT emitters.

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“…In the first case, the cathode structure is opposed by a planar anode, a diode configuration. The increase in electric field at the edge of the pillar has been associated with the performance improvement observed for CPAs when compared to other CNT structures [5,6].…”

Section: Sponsor/monitor's Report Number(s)mentioning

confidence: 98%

“…Due to the relatively simple fabrication process and high reproducibility of CPAs, we are able to utilize these structures for the integration of the gate electrode. CPAs can be grown from patterned catalysts on substrates like Si or directly on bulk metallic alloy substrates that have been patterned with metal film layers that inhibit CNT growth [5,6]. Both of these fabrication methods yield CNT emitter structures that exhibit low turn-on fields and also excellent structural stability.…”

Section: Introductionmentioning

confidence: 99%

Carbon Nanotube Field Emission Devices with Integrated Gate for High Current Applications

Niemann

Silan

Schwanfelder

et al. 2008

2008 8th IEEE Conference on Nanotechnology

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Abstract-We present a fabrication technique for the integration of a gate electrode with an array of carbon nanotube (CNT) emitters. These gated cathode structures have high emission current density and may be utilized in X-ray tubes, traveling wave tubes, and ion propulsion systems. The CNT emitters are grown directly on polished bulk metal substrates and are comprised of CNT bundles that are vertically aligned and can be uniformly produced over a large substrate area. These arrays present many advantages including the capacity to sustain current densities greater than 60 mA/cm 2 and turn-on fields as low as 0.9 V/μm. We also present a detailed integration scheme utilizing these arrays of CNT emitters for the fabrication of gated cathode structures. Relative to other CNT emitters these gated structures have low operating voltages at higher emission current densities. Finite element analysis is used to investigate the electrostatic properties of both gated and ungated pillar structures. These results demonstrate that the benefits afforded by CPAs can be further enhanced by the addition of an integrated gate electrode.

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Efficient field emission from an individual aligned carbon nanotube bundle enhanced by edge effect

Cited by 106 publications

References 25 publications

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

Excellent field emission properties from carbon nanotube field emitters fabricated using a filtration-taping method

Carbon Nanotube Field Emission Devices with Integrated Gate for High Current Applications

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