Carbon Nanotube Field Emission Devices with Integrated Gate for High Current Applications

Niemann, D.; Silan, Jeremy L.; Schwanfelder, K.R.; Rahman, M. M.; Meyyappan, M.; Nguyen, Cattien V.

doi:10.1109/nano.2008.139

Cited by 6 publications

(5 citation statements)

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“…The CNT alignment is highly dependent on the “crowding effect” between CNTs, where the densely packed CNTs show a high degree of vertical alignment due to the mechanical support between CNTs . At higher growth temperatures, the catalyst nanoparticles size distribution is small and homogeneous; the small diameter, high-density CNTs grown from the small catalyst nanoparticles are afflicted with high Van der Waals interactions, which results in the vertical alignment of CNTs …”

Section: Results and Discussionmentioning

confidence: 85%

Section: Results and Discussionmentioning

confidence: 99%

“…33 At higher growth temperatures, the catalyst nanoparticles size distribution is small and homogeneous; 34 the small diameter, high-density CNTs grown from the small catalyst nanoparticles are afflicted with high Van der Waals interactions, which results in the vertical alignment of CNTs. 35 The Raman characteristics of CNTs grown at different temperatures on 10 nm Ni and bare Si substrates are shown in Figure 2. The appearance of the D band (1339−1444 cm −1 ) and G band (1575−1577 cm −1 ) in the Raman spectrum for all of the investigated CNT samples indicate the presence of a disorder in the graphitic structure and the in-plane vibration of the C−C bond.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst

et al. 2017

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Tall, crystalline carbon nanotubes (CNTs) are desired to successfully integrate them in various applications. As the crystallinity of CNTs improves with increasing growth temperatures, higher growth temperatures are required to obtain crystalline CNTs. However, in a typical chemical vapor deposition (CVD) process, CNT growth rate reduces when the growth temperature exceeds a specific level due to the degradation of the catalyst particles. In this study, we have demonstrated the improved catalytic activity of nickel/ferrocene-hybridized catalyst as compared to sole ferrocene catalyst. To demonstrate this, CNTs are grown on bare silicon (Si) as well as nickel (Ni) catalyst-deposited substrates using volatile catalyst source (ferrocene/xylene) CVD at the growth temperatures ranging from 790 to 880 °C. It was found that CNTs grown on bare Si substrate experience a reduction in height at growth temperature above 860 °C, whereas the CNTs grown on 10 nm Ni catalyst-deposited substrates experience continuous increase in height as the temperature increases from 790 to 880 °C. The enhancement in the height of CNTs by the addition of Ni catalyst is also demonstrated on 5, 20, and 30 nm Ni layers. The examination of CNTs using electron microscopy and Raman spectra shows that the additional Ni catalyst source improves the CNT growth rates and crystallinity, yielding taller CNTs with a high degree of structural crystallinity.

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Section: Results and Discussionmentioning

confidence: 85%

Section: Results and Discussionmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst

et al. 2017

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“…These results provide an insightful view on the FE properties of SiO 2 -wrapped CNTs, which gives an effective approach to improve the consistency in FE performance of CNTs for its application in vacuum electronic devices. ∼1.75 μm 160 V μm −1 @ 550 μA 0.2 mm 2 Scott et al [55] 10 μm 1.5 V μm −1 @ 20 μA 0.08 mm 2 Lin et al [60] 0.8 μm 3.2 V μm −1 @ 8 μA 0.03 mm 2 Niemann et al [61] 10 μm 3 5Vμm −1 @ 1 μA 0.002 mm 2…”

Section: Discussionmentioning

confidence: 99%

Field emission properties of SiO₂-wrapped CNT field emitter

Lim

Xia

et al. 2017

Nanotechnology

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Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm to achieve FE current density of 22 mA cm; whereas SiO-wrapped field emitter requires 8.5 V μm to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO, as obtained from the electric field simulation. Nevertheless, SiO-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

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“…The shift in CNT alignment with growth temperature can be further explained by the mechanisms of CNT growth and alignment [177]. For further justification, an XPS analysis was performed on the silicide layer.…”

Section: Resultsmentioning

confidence: 99%

Development of carbon nanotubes for vacuum electronics application

Lim¹

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First and foremost, I would like to express my deepest appreciation to my PhD supervisor, Professor Tay Beng Kang. His continuous support and guidance are highly appreciated. He has groomed and trained me, not only in the area of research, but also in working well with collaborators and other important professional aspects. I have learned a lot from him throughout this PhD study. On top of that, I would like to acknowledge the financial supports on my research project from the Economic Development Board (EDB) under the project S14-1126-NRF OSTIn-SRP; and COE Research Grant under the project M4081666. At the same time, I would also like to express my gratitude to Nanyang Technology University for the kind opportunity to receive this offer of PhD study with fully-funded scholarship. I would also like to express my appreciations to my co-supervisor, Associate Professor Sheel Aditya, for his endless guidance, especially on the areas of device simulation and manuscript writing. At the same time, I would also like to thank my TAC members, Associate Professor Miao Jianmin and Associate Professor Daniel Chua and their respective students in providing their expertise guidance and support on microfabrication and field emission measurement. My gratitude also goes to the project's external collaborator, Professor Vladimir Labunov from Belarusian State University of Informatics and Radioelectronics, for his support on the microfabrication and Carbon Nanotubes growth. Next, I would also like to thank Professor Yan Xingbin from Lanzhou Institute of Chemical Physics (Chinese Academy of Science), for his support on the synthesis and fabrication of high current density Carbon Nanotubes field emitter. iv I would also like to express my gratitude to my project members, Dr Xia Xin, Dr Wang Shaomeng, and Mr Zishan Ali; and my fellow colleagues for their kind support in various aspects in my PhD research. Last but not least, I would like to thank my family in Malaysia, who constantly provide moral supports whenever I face difficulties and bottlenecks in my research life. To my late father, thank you for everything that you have given to me. You are proud of me, I know it.

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Carbon Nanotube Field Emission Devices with Integrated Gate for High Current Applications

Cited by 6 publications

References 10 publications

Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst

Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst

Field emission properties of SiO₂-wrapped CNT field emitter

Development of carbon nanotubes for vacuum electronics application

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Carbon Nanotube Field Emission Devices with Integrated Gate for High Current Applications

Cited by 6 publications

References 10 publications

Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst

Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst

Field emission properties of SiO2-wrapped CNT field emitter

Development of carbon nanotubes for vacuum electronics application

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Product

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Field emission properties of SiO₂-wrapped CNT field emitter