Efficient Deep Learning Using Non-volatile Memory Technology in GPU Architectures

Inci, Ahmet; Isgenc, Mehmet Meric; Marculescu, Diana

doi:10.1007/978-3-031-19568-6_8

Cited by 2 publications

(1 citation statement)

References 61 publications

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“…The magnetic tunnel junction (MTJ) consisting of two ferromagnets (FMs) separated by a thin insulator is a crucial component of the reading and writing processes in magnetic data storage systems [3,4]. STT-MRAM is a novel type of non-volatile memory that utilizes magnetic characteristics and magnetization direction to store data in the form of binary bits [5]. The operation of the MTJ-based reader/writer can be controlled by injecting spin current into the structure [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Dimensional scaling effects on critical current density and magnetization switching in CoFeB-based magnetic tunnel junction

Phoomatna,

Sampan-a-pai,

Meo

et al. 2024

J. Phys. D: Appl. Phys.

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In this work, we theoretically investigate the size dependence of the magnetization reversal behavior in CoFeB-MgO-CoFeB magnetic tunnel junctions (MTJs) by employing an atomistic spin model coupled with the spin accumulation model. The former and the latter areused to construct the magnetic structure and to model the spin transport behavior, respectively. The accuracy of the approach is confirmed by investigating the dependence of the magnetic properties on the size of the MTJ. Perpendicular magnetic anisotropy (PMA) is observed for thickness less than 1.3 nm, which is in an excellent agreement with experiment. To investigate the magnetization dynamics induced by spin-polarized current, a charge current is injected into the MTJ structure perpendicular to the stack leading to a spin-transfer torque acting on the magnetization of the CoFeB layer. The results show that the critical current density to reverse the magnetization is lower for PMA-MTJ and in addition for the same injected current density the time required to switch the magnetization is shorter than for an in-plane MTJ. The results can be used as a guideline to optimize the design of high performance MTJs for STT-MRAM applications.

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