Dimensional scaling effects on critical current density and magnetization switching in CoFeB-based magnetic tunnel junction

Abstract

In this work, we theoretically investigate the size dependence of the magnetization reversal behavior in CoFeB-MgO-CoFeB magnetic tunnel junctions (MTJs) by employing an atomistic spin model coupled with the spin accumulation model. The former and the latter are
used to construct the magnetic structure and to model the spin transport behavior, respectively. The accuracy of the approach is confirmed by investigating the dependence of the magnetic properties on the size of the MTJ. Perpendicular magnetic anisotropy (PMA) is observed for thickness less than 1.3 nm, which is in an excellent agreement with experiment. To investigate the magnetization dynamics induced by spin-polarized current, a charge current is injected into the MTJ structure perpendicular to the stack leading to a spin-transfer torque acting on the magnetization of the CoFeB layer. The results show that the critical current density to reverse the magnetization is lower for PMA-MTJ and in addition for the same injected current density the time required to switch the magnetization is shorter than for an in-plane MTJ. The results can be used as a guideline to optimize the design of high performance MTJs for STT-MRAM applications.

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

“…However, the drive toward cell size reduction and the consequent increase in current densities introduces significant reliability challenges, notably the back-hopping phenomenon, which poses a threat to memory stability [12,13]. To counteract these challenges, there has been a focused shift toward leveraging the interlayer exchange coupling (IEC) phenomenon, a critical factor in the performance and stability of memory cells, particularly in the context of complex MTJ stacks aimed at enhancing memory density [14].…”