2023
DOI: 10.1007/s10854-022-09394-0
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Efficient charge transport and enhanced photocatalysis of ultrasonically decorated SnS QDs on g-C3N4 nanosheets

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Cited by 4 publications
(2 citation statements)
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“…Previously different strategies were implemented to tune the band gap via external doping and creating heterostructure to suppress electron‐hole recombination rate upon irradiation [29] . The motivation comes from their abundance in the earth natural resources, high enough absorption coefficient, narrow band gap for electron‐hole recombination and exceptional stability [30,31] . SnS exhibits a very narrow and small band gap, due to this, it exhibits high electron‐hole recombination.…”
Section: Introductionmentioning
confidence: 99%
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“…Previously different strategies were implemented to tune the band gap via external doping and creating heterostructure to suppress electron‐hole recombination rate upon irradiation [29] . The motivation comes from their abundance in the earth natural resources, high enough absorption coefficient, narrow band gap for electron‐hole recombination and exceptional stability [30,31] . SnS exhibits a very narrow and small band gap, due to this, it exhibits high electron‐hole recombination.…”
Section: Introductionmentioning
confidence: 99%
“…[29] The motivation comes from their abundance in the earth natural resources, high enough absorption coefficient, narrow band gap for electron-hole recombination and exceptional stability. [30,31] SnS exhibits a very narrow and small band gap, due to this, it exhibits high electron-hole recombination. The primary goal was band gap tunning via doping and creating their heterostructure to suppress electron-hole recombination rate upon irradiation.…”
Section: Introductionmentioning
confidence: 99%