2000
DOI: 10.1016/s0022-0248(00)00281-5
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Efficient blue–green light-emitting diodes of ZnSSe:Te/ZnMgSSe DH structure grown by molecular-beam epitaxy

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Cited by 9 publications
(10 citation statements)
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“…It is a very promising candidate for a wide variety of optoelectronic applications such as blue-green LEDs, 1,2 blue-green lasers, 3 photodetectors, 4 and as a buffer layer in thin film solar cells. 5 This is mainly due to its direct bandgap nature, tunable optoelectronic properties and flexibility in preparation techniques.…”
Section: Introductionmentioning
confidence: 99%
“…It is a very promising candidate for a wide variety of optoelectronic applications such as blue-green LEDs, 1,2 blue-green lasers, 3 photodetectors, 4 and as a buffer layer in thin film solar cells. 5 This is mainly due to its direct bandgap nature, tunable optoelectronic properties and flexibility in preparation techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Wide bandgap ZnSe-based II-VI materials have received increased attention owing to their promising optoelectronic application as light emitters, such as light emitting diodes (LEDs) and laser diodes (LDs) [1][2][3][4]. ZnSe-based photodetectors have also been demonstrated [5].…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, it was found that the STE peak became broader and red-shifted toward the longer wavelength side as the Te concentration was increased. Thus, we should be able to adjust the output wavelength by incorporating different amounts of Te into the active well layers of ZnSe 1Àx Te x /ZnSe MQW LEDs [1,2]. However, to achieve a high-brightness LED, it is necessary to match lattice constants of the epitaxial layers to that of the underneath substrate.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, many studies on the 3D bulk structure of ZnSe 1 À x Te x have been performed to understand this system [1][2][3][4]. A ZnSeTe-based lightemitting device in the blue-green spectral region has also been proposed [5]. The photoluminescence (PL) of ZnSe/ZnTe superlattice structures is attributed to isoelectronically bound excitons [5][6][7], instead of quantum-confined excitons.…”
mentioning
confidence: 99%
“…A ZnSeTe-based lightemitting device in the blue-green spectral region has also been proposed [5]. The photoluminescence (PL) of ZnSe/ZnTe superlattice structures is attributed to isoelectronically bound excitons [5][6][7], instead of quantum-confined excitons. The quantum confinement effect of Te-bound excitons is only significant in an extremely thin layer [7].…”
mentioning
confidence: 99%