Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers

Yang, Xiaozhe; Yang, Xu; Gu, Haiyang; Kawai, Kentaro; Arima, Kenta; Yamamura, Kazuya

doi:10.1016/j.ceramint.2021.11.301

Cited by 28 publications

(14 citation statements)

References 26 publications

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“…Yang et al [178] introduced UAECMP, which exhibited a remarkable polishing efficiency that was 4.5 times higher than that of conventional ECMP in polishing 4H-SiC wafers. As depicted in figures 26(a)-(d), the enhanced efficiency is attributed to the intensified contact force between the abrasive and the SiC surface, which is facilitated by the impact of ultrasonic vibrations.…”

Section: Hybrid Nontraditional Energy-assisted Polishingmentioning

confidence: 99%

Nontraditional energy-assisted mechanical machining of difficult-to-cut materials and components in aerospace community: a comparative analysis

Zhao,

Ding

et al. 2024

Int. J. Extrem. Manuf.

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Difficult-to-cut materials such as titanium alloys, high-temperature alloys, metal/ceramic/polymer-matrix composites, hard and brittle materials, as well as geometrically complex components such as thin-walled structures, micro channels and complex surfaces, are widely used in aerospace community. Mechanical machining is the main material removal process and responsible for the vast majority of material removal for aerospace components. Nevertheless, it encounters many problems in terms of severe and rapid tool wear, low machining efficiency, and deteriorated surface integrity. Nontraditional energy-assisted mechanical machining is a hybrid process in which nontraditional energies, e.g., vibration, laser, electric, etc., are applied to improve the machinability of local material and decrease burden of mechanical machining. It provides a feasible and promising way for improving machinability and surface quality, reducing process forces, and prolonging tool life, etc. However, systematic reviews of this technology are lacking with respect to the current research status and development direction. This paper reviews recent progress in nontraditional energy-assisted mechanical machining of difficult-to-cut materials and components in aerospace community. It focuses on the processing principles, material responses under nontraditional energy, resultant forces and temperatures, material removal mechanisms and applications of these processes including vibration-, laser-, electric-, magnetic-, chemical-, cryogenic cooling-, and hybrid nontraditional energies-assisted mechanical machining. Eventually, a comprehensive summary of the principles, advantages and limitations for each hybrid process is provided, and future perspectives on forward design, device development and sustainability of nontraditional energy-assisted mechanical machining processes are discussed.

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Section: Hybrid Nontraditional Energy-assisted Polishingmentioning

confidence: 99%

Nontraditional energy-assisted mechanical machining of difficult-to-cut materials and components in aerospace community: a comparative analysis

Zhao,

Ding

et al. 2024

Int. J. Extrem. Manuf.

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“…Since the efficiency of CMP is limited by the oxidation of 4H-SiC, researchers have developed synergistic oxidation approaches such as the plasma-assisted electrochemical oxidation, the ultrasonic-assisted electrochemical oxidation, and the electro-assisted photocatalysis oxidation. [140][141][142][143] Among these approaches, the highest oxidation rate of SiC reaches 57.1 nm min −1 when the anodic oxidation is employed. This provides a clue for the future improvement of the CMP for 4H-SiC wafers.…”

Section: Other Synergistic Approachesmentioning

confidence: 99%

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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“…A scratch-free and subsurface damage=free surface can be obtained, as confirmed by scanning white-light interferometry (SWLI) images and Raman images, respectively [ 29 ]. In 2022, Yang et al proposed a slurry-less ultrasonic vibration-assisted ECMP (ultrasonic-ECMP) by placing a vibrator onto the lower polishing plate ( Figure 5 B) [ 30 ]. The working principle is based on the anodic oxidation of SiC, followed by the oxide layer removal by a fixed abrasive grinding stone.…”

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

“…For comparison, the wafer surface roughness (Sq) of ECMP and ultrasonic-ECMP treated wafers was 0.528 nm and 1.993 nm, respectively. The results raise the importance of vibration amplitude optimization in different electrolytes, which leads to different oxidation behaviors [ 30 ].…”

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

et al. 2022

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Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

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Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers

Cited by 28 publications

References 26 publications

Nontraditional energy-assisted mechanical machining of difficult-to-cut materials and components in aerospace community: a comparative analysis

Nontraditional energy-assisted mechanical machining of difficult-to-cut materials and components in aerospace community: a comparative analysis

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

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