Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells

Tang, P. J. P.; Hardaway, H. R.; Heber, Joerg; Phillips, Chris C.; Pullin, M. J.; Stradling, R. A.; Yuen, Peter W. T.; Hart, L.

doi:10.1063/1.121670

Cited by 27 publications

(8 citation statements)

References 15 publications

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“…946,947 That result implied a substantial CBO and negative VBO for small x. 948,949 Wei and Zunger pointed out that a negative VBO for InAs/InSb directly contradicts other theoretical and experimental evidence. 549 Other experiments [950][951][952] are in much better agreement with the usual theoretical finding of an essentially null CBO, which yields a type-I or type-II staggered alignment depending on details of the strain and ordering conditions.…”

Section: G Gasbõinsb and Inasõinsbmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,464

283

3,761

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: G Gasbõinsb and Inasõinsbmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,464

283

3,761

View full text Add to dashboard Cite

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“…These include InAs/InAsSb strained quantum-well LEDs which benefit from Auger suppression in type-II structures to yield emission at 5 and 8 µm (Pullin et al 1999;Tang et al 1998), which is 64% lower than the alloy bandgap. Reported output powers were 50 and 24 µW A −1 (50% duty cycle), respectively.…”

Section: Historical Perspectivementioning

confidence: 99%

Physics and technology of mid–infrared light emitting diodes

Krier

2001

Philosophical Transactions of the Royal Society of London. Seri

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There is increasing interest in mid-infrared (mid-IR) light emitting diodes which operate in the 2-5 µm spectral region. Efficient LEDs operating at the characteristic absorption wavelengths of target gases, such as CH 4 , CO 2 and CO, have great potential for the next generation of optical gas sensors. The fundamental difficulties associated with realizing suitable mid-IR LEDs at different wavelengths, with high continuous wave (CW) output power at room temperature, relate principally to quantum efficiency and optical extraction of the light. Each of these will be briefly considered. Some of the different device designs and techniques used for the suppression of non-radiative Auger recombination and the reduction of Shockley-Read-Hall centres are discussed. Liquid phase epitaxy (LPE) continues to hold a strong position in mid-IR LED technology and many of the best LEDs currently available have been fabricated using this technique. In this respect, the LPE growth of associated InAs(Sb)-based epitaxial structures and their purification is briefly reported. An overview of the 'state of the art' is also given with respect to the application of mid-IR LEDs in practical gas sensors.

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“…However, device C has higher slope compared to other devices and, hence, may have a voltage drop greater than other devices at higher currents. As we decrease the device operating temperature, the voltage drops increase 3 (not shown here) due to the reduction in Auger recombination process 10.…”

Section: Resultsmentioning

confidence: 78%

“…The crystalline properties are seriously affected by the In contents in In x Ga 1− x N QW region for solar cell 9. Tang et al 10 reported a decrease in LED efficiency by increase of Sb content in their InAs 1− x Sb x alloy QW region. In an earlier paper 11, we have reported the preliminary study of LED output power variation for two In mole fraction values.…”

Section: Introductionmentioning

confidence: 99%

Effect of indium mole fraction on infrared light emitting diode (LED) device performance

Das

2011

Physica Status Solidi (a)

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We report on the design and fabrication of interband cascade light emitting diode (LED) device with InAs/Ga 1Àx In x Sb/InAs quantum well (QW) active region. We have varied indium (In) contents in the QW region between 18 and 30% from x ¼ 0.18 to 0.3 and found that light emission power increases with decrease of In percentage value. We observed a 200% increase in light emission power by decreasing the In content from 30 to 18%. By cooling the LED device, we observed a higher increase in light output power for higher In content devices compared to that of lower In content devices.

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Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells

Cited by 27 publications

References 15 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Physics and technology of mid–infrared light emitting diodes

Effect of indium mole fraction on infrared light emitting diode (LED) device performance

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